Avoiding Plasma Damage: MacEtch enabled ß-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination

被引：0

作者：

Huang, Hsien-Chih ^{[1
]}

Ren, Zhongjie ^{[2
]}

Bhuiyan, A. F. M. Anhar Uddin ^{[3
]}

Feng, Zixuan

Luo, Xixi ^{[2
]}

Huang, Alex Q. ^{[2
]}

Zhao, Hongping ^{[3
]}

Li, Xiuling ^{[1
,2
]}

机构：

[1] Univ Illinois, Chicago, IL 60680 USA

[2] Univ Texas Austin, Austin, TX 78712 USA

[3] Ohio State Univ, Columbus, OH 43210 USA

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

beta-Ga2O3; MacEtch and; FinFET;

D O I：

10.1109/EDTM55494.2023.10103115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although highly promising, the performance of beta Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of beta Ga2O3 FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific onresistance (Ron,sp) of 6.5 mO center dot cm(2) and a 370 V breakdown voltage are achieved. The MacEtchformed FinFETs demonstrate near-zero (9.7 mV) hysteresis.

引用

页数：3

共 50 条

[21] Graphite/hydrogen reduction route to Ga2O3 nanobelts
Zhang, J
Zhang, LD
SOLID STATE COMMUNICATIONS, 2002, 122 (09) : 493 - 496
[22] Enhancing the performance of Ga2O3 FinFETs through double fin channels and buried oxide
Goyal, Priyanshi
Kaur, Harsupreet
MICRO AND NANOSTRUCTURES, 2024, 196
[23] Effects of Downstream Plasma Exposure on β-Ga2O3 Rectifiers
Xia, Xinyi
Xian, Minghan
Fares, Chaker
Ren, Fan
Kim, Junghun
Kim, Jihyun
Tadjer, Marko
Pearton, Stephen J.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (06)
[24] Wet chemical and plasma etching of Ga2O3(Gd2O3)
Ren, F
Hong, M
Mannaerts, JP
Lothian, JR
Cho, AY
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) : L239 - L241
[25] Proton damage effects in double polymorph γ/β-Ga2O3 diodes
Polyakov, Alexander Y.
Vasilev, Anton A.
Kochkova, Anastasiia I.
Shchemerov, Ivan V.
Yakimov, Eugene B.
Miakonkikh, Andrej V.
Chernykh, Alexei V.
Lagov, Petr B.
Pavlov, Yrii S.
Doroshkevich, A. S.
Isaev, R. Sh.
Romanov, Andrei A.
Alexanyan, Luiza A.
Matros, Nikolai
Azarov, Alexander
Kuznetsov, Andrej
Pearton, Stephen
JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (03) : 1020 - 1029
[26] 10 MeV proton damage in β-Ga2O3 Schottky rectifiers
Yang, Jiancheng
Chen, Zhiting
Ren, Fan
Pearton, S. J.
Yang, Gwangseok
Kim, Jihyun
Lee, Jonathan
Flitsiyan, Elena
Chernyak, Leonid
Kuramata, Akito
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (01):
[27] An Estimation of the Neutron Displacement Damage Cross Section for Ga2O3
Chaiken, Max F.
Blue, Thomas E.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (05) : 1147 - 1152
[28] Radiation damage in ?-Ga2O3 induced by swift heavy ions
Ai, Wensi
Xu, Lijun
Nan, Shuai
Zhai, Pengfei
Li, Weixing
Li, Zongzhen
Hu, Peipei
Zeng, Jian
Zhang, Shengxia
Liu, Li
Sun, Youmei
Liu, Jie
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (12)
[29] REDUCTION OF ABSORPTION-EDGE FREQUENCY BY NONSTOICHIOMETRIC GA IN GA2O3 FILMS
DAWAR, A
AGARWAL, R
HARTNAGEL, H
THIN SOLID FILMS, 1976, 32 (02) : L9 - L11
[30] Trapping and Detrapping Mechanisms in β-Ga2O3 Vertical FinFETs Investigated by Electro-Optical Measurements
Fabris, Elena
De Santi, Carlo
Caria, Alessandro
Li, Wenshen
Nomoto, Kazuki
Hu, Zongyang
Jena, Debdeep
Xing, Huili Grace
Meneghesso, Gaudenzio
Zanoni, Enrico
Meneghini, Matteo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 3954 - 3959

← 1 2 3 4 5 →