Avoiding Plasma Damage: MacEtch enabled ß-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination

被引：0

作者：

Huang, Hsien-Chih ^{[1
]}

Ren, Zhongjie ^{[2
]}

Bhuiyan, A. F. M. Anhar Uddin ^{[3
]}

Feng, Zixuan

Luo, Xixi ^{[2
]}

Huang, Alex Q. ^{[2
]}

Zhao, Hongping ^{[3
]}

Li, Xiuling ^{[1
,2
]}

机构：

[1] Univ Illinois, Chicago, IL 60680 USA

[2] Univ Texas Austin, Austin, TX 78712 USA

[3] Ohio State Univ, Columbus, OH 43210 USA

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

beta-Ga2O3; MacEtch and; FinFET;

D O I：

10.1109/EDTM55494.2023.10103115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although highly promising, the performance of beta Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of beta Ga2O3 FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific onresistance (Ron,sp) of 6.5 mO center dot cm(2) and a 370 V breakdown voltage are achieved. The MacEtchformed FinFETs demonstrate near-zero (9.7 mV) hysteresis.

引用

页数：3

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