Application of displacement damage dose approach to low-energy proton irradiated GaInP/GaAs/Ge solar cells

被引：2
|
作者：
Song, Ci [1 ]
Liu, Shuhuan [2 ]
Wang, Xuan [2 ]
Mu, Haibao [1 ]
Bai, Yurong [2 ]
Li, Haodi [2 ]
Xing, Tian [2 ]
He, Chaohui [2 ]
Chen, Wei [3 ]
机构：
[1] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China
[3] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Effe, Xian 710024, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2023年 / 545卷
基金：
中国国家自然科学基金;
关键词：
GaInP/GaAs/Ge solar cells; Displacement damage; Proton; Isotropic radiation field; Geant4; SCREENED COULOMB SCATTERING; OMNIDIRECTIONAL PROTON; SPACE; IONS;
D O I：
10.1016/j.nimb.2023.165144
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this paper, a displacement damage simulation model for proton-irradiated GaInP/GaAs/Ge triple junction (TJ) solar cells is constructed in Geant4, and the problem of the displacement damage dose curve deviation for lowenergy protons is analyzed. The modeling results show that energy loss effects and local displacement damage are important factors for the deviation of the displacement damage dose curve. The non-ionizing energy loss (NIEL) values of GaAs sub-cells calculated by Geant4 can effectively improve the deviation of the curve caused by energy loss effects. The NIEL should be constrained by the structure and size of the device rather than just the proton energy and material type. In addition, the isotropic radiation field numerical method proposed in this paper allows the displacement damage simulation model constructed in Geant4 to be expediently applied to the radiation environment in space.
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收藏
页数：8
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