Kinetics of thermally induced processes in Ag doped As40Se30Te30 chalcogenide glass

被引:1
|
作者
Vigi, R. [1 ]
Strbac, G. R. [1 ]
Strbac, D. D. [2 ]
Bosak, O. [3 ]
Kubliha, M. [3 ]
机构
[1] Univ Novi Sad, Fac Sci, Trg Dositeja Obradovica 4, Novi Sad, Serbia
[2] Univ Novi Sad, Fac Tech Sci, Trg Dositeja Obradov 6, Novi Sad, Serbia
[3] Slovak Univ Technol, Fac Mat Sci & Technol, Bottova 25, Trnava 91724, Slovakia
来源
CHALCOGENIDE LETTERS | 2024年 / 21卷 / 01期
关键词
Amorphous materials; Phase transition; Crystallization kinetics; Thermal analysis;
D O I
10.15251/CL.2024.211.21
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The processes of glass-transition and crystallization of chalcogenide glass As40Se30Te30 with 5 at.% silver were analyzed using differential scanning calorimetry. The values of glass-transition temperatures and activation energy were determined. Two crystallization processes were also detected and three-dimensional growth. Using non-isoconversional models the activation energies for both processes amounted to 112(2) kJ/mol and 97(2) kJ/mol. Isoconversional models were used to track changes in activation energy. The presence of Te significantly affects the thermal parameters as well as the structure of the glass while the presence of Ag does not significantly change the degree of connectivity of the As40Se30Te30 glass matrix.
引用
收藏
页码:21 / 37
页数:17
相关论文
共 50 条
  • [21] Metal-induced effects on the glass transition kinetics of glassy Se70Te30 alloy
    Dohare, C.
    Mehta, N.
    Kumar, A.
    PHASE TRANSITIONS, 2011, 84 (11-12) : 1064 - 1074
  • [22] Crystallization kinetics of some Se-Te-Ag chalcogenide glasses
    Mehta, N
    Zulfequar, M
    Kumar, A
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2004, 6 (02): : 441 - 448
  • [23] THE EFFECT OF Ga ON THE STRUCTURAL AND OPTICAL PROPERTIES OF THE As30Se50Te20 CHALCOGENIDE GLASS
    Shpotyuk, Ya
    Pavlyk, B.
    Rykhlyuk, S.
    Boussard-Pledel, C.
    Nazabal, V.
    Bureau, B.
    JOURNAL OF PHYSICAL STUDIES, 2015, 19 (04):
  • [24] Characterization of the optical constants and dispersion parameters of chalcogenide Te40Se30S30 thin film: thickness effect
    M. I. Abd-Elrahman
    M. M. Hafiz
    Ammar Qasem
    M. A. Abdel-Rahim
    Applied Physics A, 2016, 122
  • [25] Characterization of the optical constants and dispersion parameters of chalcogenide Te40Se30S30 thin film: thickness effect
    Abd-Elrahman, M. I.
    Hafiz, M. M.
    Qasem, Ammar
    Abdel-Rahim, M. A.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (02): : 1 - 6
  • [26] CRYSTALLIZATION KINETICS OF CHALCOGENIDE GLASS SE0.8TE0.2
    HAFIZ, MM
    AFIFY, N
    OSMAN, MA
    DONGOL, M
    JOURNAL OF THERMAL ANALYSIS, 1990, 36 (7-8): : 2417 - 2426
  • [27] Laser Induced Optical Photo Darkening in Sb30S40Se30 Chalcogenide Thin Films
    Naik, Ramakanta
    Behera, Namita
    Ganesan, R.
    ADVANCED SCIENCE LETTERS, 2014, 20 (3-4) : 559 - 564
  • [28] Optical invstigations of thermally evaporated Ge10Se60Te30 and Ge8Se60Te30In2 chalcogenide thin film for optical memory devices
    Singh, Pravin Kumar
    Mishra, Surabhi
    Kumar, Brijesh
    Dwivedi, D. K.
    2018 5TH IEEE UTTAR PRADESH SECTION INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS AND COMPUTER ENGINEERING (UPCON), 2018, : 1090 - 1093
  • [29] CRYSTALLIZATION KINETICS AND ELECTRICAL-PROPERTIES OF CHALCOGENIDE GLASS AS25SI45TE30
    ABDELRAHIM, MA
    MOHARRAM, AH
    HAFIZ, MM
    AFIFY, N
    JOURNAL OF THERMAL ANALYSIS, 1993, 39 (11-12): : 1483 - 1494
  • [30] NONISOTHERMAL CRYSTALLIZATION KINETICS OF TERNARY SE60TE30S10 GLASS
    Khalifa, Zaki S.
    Elsayed, Samy A.
    SURFACE REVIEW AND LETTERS, 2022, 29 (02)