Cu/MgO-based resistive random access memory for neuromorphic applications

被引:1
|
作者
Hu, Gao [1 ,2 ]
Yu, Zhendi [3 ]
Qu, Hao [2 ]
Yuan, Youhong [2 ]
Li, Dengfeng [4 ]
Zhu, Mingmin [3 ]
Guo, Jinming [4 ]
Xia, Chen [1 ,2 ]
Wang, Xunying [1 ,2 ]
Wang, Baoyuan [1 ,2 ]
Ma, Guokun [1 ,2 ]
Wang, Hao [1 ,2 ]
Dong, Wenjing [1 ,2 ]
机构
[1] Hubei Yangtze Memory Labs, Wuhan 430205, Hubei, Peoples R China
[2] Hubei Univ, Sch Microelect, Wuhan 430062, Hubei, Peoples R China
[3] China Jiliang Univ, Coll Informat Engn, Key Lab Electromagnet Wave Informat Technol & Metr, Hangzhou 310018, Peoples R China
[4] Hubei Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Green Preparat & Applicat Funct Mat, Wuhan 430062, Peoples R China
关键词
LAYER;
D O I
10.1063/5.0189599
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resistive Random Access Memory (ReRAM) is considered to be a suitable candidate for future memories due to its low operating voltage, fast access speed, and the potential to be scaled down to nanometer range for ultra-high-density storage. In addition, its ability to retain multi-level resistance states makes it suitable for neuromorphic computing applications. In this paper, we report the resistive switching performance of Cu/MgO/Pt ReRAM. Repetitive resistive switching transitions with low switching voltages (around 1 V), 10(2) storage windows, and multi-level memory capabilities have been obtained. Biological synaptic plasticity behavior, such as long-duration potentiation/depression and paired-pulse facilitation, has been realized by the Cu/MgO/Pt ReRAM. The simulation of convolutional neural network for handwritten digit recognition is carried out to evaluate its potential application in neuromorphic systems. Finally, the conduction mechanism of the device is studied, and a resistive switching model based on Cu conducting filaments is proposed according to the dependence of I-V results on temperature and electrode size as well as the element distribution in the device. These findings indicate the potential of Cu/MgO/Pt device as high-performance nonvolatile memories and its utilization in future computer systems and neuromorphic computing.
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页数:7
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