Multi-physics Simulations for Nanoscale CMOS Reliability

被引：1
|
作者：
Liu, Xiaoyan [1 ]
Fan, Mengqi [1 ]
Xu, Jinghan [1 ]
Liu, Fei [1 ]
机构：
[1] Peking Univ, Sch Integrated Circuits, Beijing, Peoples R China
来源：
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年
基金：
国家重点研发计划;
关键词：
CMOS; Reliability; Trap; Electromigration; ELECTROMIGRATION;
D O I：
10.23919/SISPAD57422.2023.10319536
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multi-scale and multi-physics simulation methods are developed to investigate various reliability problems including trap-induced degradation, self-heating effect and electromigration of interconnects.
引用
收藏
页码：13 / 16
页数：4
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