Observation of Multi-Phonon Emission in Monolayer WS2 on Various Substrates

被引:1
|
作者
Adler, Eli R. [1 ,2 ]
Le, Thy Doan Mai [1 ]
Boulares, Ibrahim [2 ]
Boyd, Robert [3 ]
He, Yangchen [3 ]
Rhodes, Daniel [3 ]
Van Keuren, Edward [1 ]
Barbara, Paola [1 ]
Najmaei, Sina [2 ]
机构
[1] Georgetown Univ, Dept Phys, Washington, DC 20057 USA
[2] Army Res Lab, US Army Combat Capabil Dev Command, Adelphi, MD 20783 USA
[3] Univ Wisconsin Madison, Dept Mat Sci & Engn, Madison, WI 53706 USA
关键词
two-dimensional materials; transition metal dichalcogenides; dark excitons; VALLEY POLARIZATION; TRIONS; MOS2;
D O I
10.3390/nano14010037
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transition metal dichalcogenides (TMDs) have unique absorption and emission properties that stem from their large excitonic binding energies, reduced-dielectric screening, and strong spin-orbit coupling. However, the role of substrates, phonons, and material defects in the excitonic scattering processes remains elusive. In tungsten-based TMDs, it is known that the excitons formed from electrons in the lower-energy conduction bands are dark in nature, whereas low-energy emissions in the photoluminescence spectrum have been linked to the brightening of these transitions, either via defect scattering or via phonon scattering with first-order phonon replicas. Through temperature and incident-power-dependent studies of WS2 grown by CVD or exfoliated from high-purity bulk crystal on different substrates, we demonstrate that the strong exciton-phonon coupling yields brightening of dark transitions up to sixth-order phonon replicas. We discuss the critical role of defects in the brightening pathways of dark excitons and their phonon replicas, and we elucidate that these emissions are intrinsic to the material and independent of substrate, encapsulation, growth method, and transfer approach.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2
    Yanlong Wang
    Chunxiao Cong
    Weihuang Yang
    Jingzhi Shang
    Namphung Peimyoo
    Yu Chen
    Junyong Kang
    Jianpu Wang
    Wei Huang
    Ting Yu
    Nano Research, 2015, 8 : 2562 - 2572
  • [32] Dendritic WS2 Nanocrystal-Coated Monolayer WS2 Nanosheet Heterostructures for Phototransistors
    Zhan, Li
    Shen, Jun
    Yan, Jiangbing
    Yan, Ruiyang
    Zhang, Xiaoxian
    Long, Mingsheng
    Liu, Zheng
    Wang, Xu
    Fu, Shaohua
    Zhang, Li
    Cui, Hengqing
    Zhang, Xin
    ACS APPLIED NANO MATERIALS, 2021, 4 (10) : 11097 - 11104
  • [33] The Anisotropy and Birefringence of Monolayer WS2 Semiconductor
    Santosh, R.
    Rao, U. Nageswara
    Rao, M. Jagan Mohan
    Yattirajula, Suresh Kumar
    Kumar, V.
    MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS, 2023, 904 : 249 - 255
  • [34] Electronic properties of WS2 monolayer films
    Klein, A
    Tiefenbacher, S
    Eyert, V
    Pettenkofer, C
    Jaegermann, W
    THIN SOLID FILMS, 2000, 380 (1-2) : 221 - 223
  • [35] Exciton Binding Energy of Monolayer WS2
    Bairen Zhu
    Xi Chen
    Xiaodong Cui
    Scientific Reports, 5
  • [36] Electron-Phonon Interaction and Double-Resonance Raman Studies in Monolayer WS2
    Gaur, Anand P. S.
    Sahoo, Satyaprakash
    Scott, J. F.
    Katiyar, Ram S.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (09): : 5146 - 5151
  • [37] Superlubricity of epitaxial monolayer WS2 on graphene
    Buch, Holger
    Rossi, Antonio
    Forti, Stiven
    Convertino, Domenica
    Tozzini, Valentina
    Coletti, Camilla
    NANO RESEARCH, 2018, 11 (11) : 5946 - 5956
  • [38] Modeling of the Optical Properties of Monolayer WS2
    Kim, Tae Jung
    Van Long Le
    Hoang Tung Nguyen
    Xuan Au Nguyen
    Kim, Young Dong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2020, 77 (04) : 298 - 302
  • [39] Exciton Binding Energy of Monolayer WS2
    Zhu, Bairen
    Chen, Xi
    Cui, Xiaodong
    SCIENTIFIC REPORTS, 2015, 5
  • [40] Modeling of the Optical Properties of Monolayer WS2
    Tae Jung Kim
    Van Long Le
    Hoang Tung Nguyen
    Xuan Au Nguyen
    Young Dong Kim
    Journal of the Korean Physical Society, 2020, 77 : 298 - 302