The calculated electronic and optical properties of β-Ga2O3 based on the first principles

被引:8
|
作者
Wang, Yan-Ru [1 ]
Bai, Zhi-Xin [2 ]
Liu, Qi-Jun [2 ]
Liu, Zheng-Tang [3 ]
Jiang, Cheng-Lu [1 ]
机构
[1] Sichuan Agr Univ, Coll Water Conservancy & Hydropower Engn, Yaan 625014, Peoples R China
[2] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Peoples R China
[3] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
关键词
First-principle; beta-Ga O; Optical properties; SOLAR-BLIND PHOTODETECTOR; GALLIUM OXIDE; CRYSTALS; GROWTH; FILM;
D O I
10.1007/s00894-024-05907-2
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
Introduction The electronic and optical properties of beta-Ga2O3 have been investigated by CASTEP using first principles. It is found that beta-Ga2O3 has an indirect band gap and the conduction band base is located at the Gamma point. The stability of beta-Ga2O3 is demonstrated by the calculation of elastic constants, and the ductility of beta-Ga2O3 is demonstrated by the ratio of Poisson's ratio to shear modulus. The optical property analysis shows that beta-Ga2O3 has a high absorption capacity in the ultraviolet region, but a low absorption capacity in visible and infrared light. Context The structure, optical, and electronic properties of beta-Ga2O3 are calculated and analyzed based on first-principles calculation. The optimized structures of beta-Ga2O3 are in good agreement with previously studied. In this paper, the elastic, electronic, and optical properties of beta-Ga2O3 are calculated. Methods The CASTEP code was employed to execute these calculations in the present work, where the exchange-correlation interactions were treated in the generalized gradient approximation (GGA) using the Perdew-Burke-Ernzerhof (PBE) functional in the geometry optimizations and electronic and elastic properties.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Effect of Selenium Doping on the Electronic Properties of β-Ga2O3 by First-Principles Calculations
    Song, Hanzhao
    Xie, Zhigao
    Liao, Yimin
    Wang, Yan
    Tan, Chee-Keong
    JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (10) : 6282 - 6289
  • [22] First-principles calculations of the near-edge optical properties of β-Ga2O3
    Mengle, Kelsey A.
    Shi, Guangsha
    Bayerl, Dylan
    Kioupakis, Emmanouil
    APPLIED PHYSICS LETTERS, 2016, 109 (21)
  • [23] Electronic structure and optical property of metal-doped Ga2O3: a first principles study
    Tang, Cheng
    Sun, Jie
    Lin, Na
    Jia, Zhitai
    Mu, Wenxiang
    Tao, Xutang
    Zhao, Xian
    RSC ADVANCES, 2016, 6 (82) : 78322 - 78334
  • [24] Effects of Cu, Ag and Au on electronic and optical properties of α-Ga2O3 oxide according to first-principles calculations
    Pan, Yong
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2023, 174
  • [25] Electronic structure and optical properties of Ge- and F-doped α-Ga2O3: First-principles investigations
    束体康
    苗瑞霞
    郭三栋
    王少青
    赵晨鹤
    张雪兰
    Chinese Physics B, 2020, (12) : 469 - 474
  • [26] Electronic structure and optical properties of Ge- and F-doped α-Ga2O3: First-principles investigations*
    Shu, Ti-Kang
    Miao, Rui-Xia
    Guo, San-Dong
    Wang, Shao-Qing
    Zhao, Chen-He
    Zhang, Xue-Lan
    CHINESE PHYSICS B, 2020, 29 (12)
  • [27] First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga2O3
    Mondal, Abhay Kumar
    Mohamed, Mohd Ambri
    Ping, Loh Kean
    Mohamad Taib, Mohamad Fariz
    Samat, Mohd Hazrie
    Mohammad Haniff, Muhammad Aniq Shazni
    Bahru, Raihana
    MATERIALS, 2021, 14 (03) : 1 - 11
  • [28] First principles study on the electronic properties of Cr, Fe, Mn and Ni doped β-Ga2O3
    He, Hao
    Li, Wei
    Xing, Huaizhong
    Liang, Erjun
    ADVANCED ENGINEERING MATERIALS II, PTS 1-3, 2012, 535-537 : 36 - +
  • [29] First Principles Study on Electronic Structures of α-Ga2O3 and α-Ir2O2
    Uno, Kazuyuki
    Nakamura, Taichi
    Tanaka, Ichiro
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [30] Electronic Properties of Ga2O3 Polymorphs
    Lyons, John L.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (07) : Q3226 - Q3228