High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes

被引:0
|
作者
Choe, Yuri [1 ]
Reece, Duncan [1 ]
Bergsman, David S. [1 ]
机构
[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA
来源
基金
美国国家科学基金会;
关键词
THIN-FILMS; IN-SITU; TEMPERATURE; ENERGY; NANOFABRICATION; DIETHYLZINC; METALCONE; GROWTH;
D O I
10.1116/6.0003354
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reactor. Such a system allows independent processes to run in parallel by connecting more than one reaction chamber to shared resources, such as a pump and reactant manifold. Appropriate control systems for the shared resources maintain independence in deposition parameters and resulting films while allowing for depositions in a vacuum or with a carrier gas. An example system is built and shown to exhibit process uniformity while avoiding cross-contamination, as verified using ellipsometry and x-ray photoelectron spectroscopy. The reactor design can screen new ALD/MLD deposition processes more quickly than a typical one-chamber system without the capital cost of an equivalent number of independent systems, accelerating the pace of innovations in nanotechnology.
引用
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页数:9
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