Design of an atomic layer deposition reactor for hydrogen sulfide compatibility

被引：58
|
作者：
Dasgupta, Neil P. [1 ]
Mack, James F. [1 ]
Langston, Michael C. [1 ]
Bousetta, Al [2 ]
Prinz, Fritz B. [1 ,3 ]
机构：
[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[2] Swagelok Co, Santa Clara, CA 95054 USA
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2010年 / 81卷 / 04期
基金：
美国国家科学基金会;
关键词：
atomic layer deposition; chemical reactors; health and safety; hydrogen compounds; II-VI semiconductors; IV-VI semiconductors; lead compounds; semiconductor thin films; wide band gap semiconductors; zinc compounds; THIN-FILMS; EPITAXY; GROWTH;
D O I：
10.1063/1.3384349
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A customized atomic layer deposition (ALD) reactor was designed with components compatible with hydrogen sulfide (H2S) chemistry. H2S is used as a reactant for the ALD of metal sulfides. The use of H2S in an ALD reactor requires special attention to safety issues due to its highly toxic, flammable, and corrosive nature. The reactor was designed with respect to materials compatibility of all wetted components with H2S. A customized safety interlock system was developed to shut down the system in the event of toxic gas leakage, power outage, loss of building ventilation or compressed air pressure. ALD of lead sulfide (PbS) and zinc sulfide (ZnS) were demonstrated with no chemical contamination or detectable release of H2S.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide
    Yu, Yanghong
    Zhou, Zhongchao
    Xu, Lina
    Ding, Yihong
    Fang, Guoyong
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021, 23 (15) : 9594 - 9603
  • [2] Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide
    Sinha, Soumyadeep
    Mahuli, Neha
    Sarkar, Shaibal K.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (01):
  • [3] Atomic Layer Deposition of Gallium Sulfide Films Using Hexakis(dimethylamido)digallium and Hydrogen Sulfide
    Meng, Xiangbo
    Libera, Joseph A.
    Fister, Timothy T.
    Zhou, Hua
    Hedlund, Jenny K.
    Fenter, Paul
    Elam, Jeffrey W.
    [J]. CHEMISTRY OF MATERIALS, 2014, 26 (02) : 1029 - 1039
  • [4] A comprehensive study on atomic layer deposition of molybdenum sulfide for electrochemical hydrogen evolution
    Kwon, Do Hyun
    Jin, Zhenyu
    Shin, Seokhee
    Lee, Wook-Seong
    Min, Yo-Sep
    [J]. NANOSCALE, 2016, 8 (13) : 7180 - 7188
  • [5] Atomic Layer Deposition of Metal Sulfide Materials
    Dasgupta, Neil P.
    Meng, Xiangbo
    Elam, Jeffrey W.
    Martinson, Alex B. F.
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 2015, 48 (02) : 341 - 348
  • [6] Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide
    Stuyven, G
    De Visschere, P
    Hikavyy, A
    Neyts, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 234 (04) : 690 - 698
  • [7] Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor
    Selvaraj, Sathees Kannan
    Jursich, Gregory
    Takoudis, Christos G.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2013, 84 (09):
  • [8] Dynamic Modeling for the Design and Cyclic Operation of an Atomic Layer Deposition (ALD) Reactor
    Travis, Curtisha D.
    Adomaitis, Raymond A.
    [J]. PROCESSES, 2013, 1 (02) : 128 - 152
  • [9] MODELING OF PRECURSOR FLOW AND DEPOSITION IN ATOMIC LAYER DEPOSITION REACTOR
    SIIMON, H
    AARIK, J
    [J]. JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 245 - 252
  • [10] Atomic layer deposition of copper sulfide thin films
    Schneider, Nathanaelle
    Lincot, Daniel
    Donsanti, Frederique
    [J]. THIN SOLID FILMS, 2016, 600 : 103 - 108
12345