Investigation on chemical mechanical polishing of Ga-faced GaN crystal with weak alkaline slurry

被引：1

作者：

Li, Qiubo ^{[1
]}

Liu, Lei ^{[1
,2
]}

Yu, Jiaoxian ^{[3
]}

Wang, Shouzhi ^{[1
,2
]}

Wang, Guodong ^{[1
,2
]}

Wang, Zhongxin ^{[1
]}

Qi, Zhanguo ^{[1
]}

Zhao, Xuanyi ^{[1
]}

Liu, Guangxia ^{[4
]}

Xu, Xiangang ^{[1
]}

Zhang, Lei ^{[1
,2
,5
]}

机构：

[1] Shandong Univ, Inst Novel Semicond, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] Shandong Crystal GaN Semicond Co Ltd, Jinan 250100, Peoples R China

[3] Qilu Univ Technol, Shandong Acad Sci, Sch Mat Sci & Engn, Key Lab Proc & Testing Technol Glass & Funct Ceram, Jinan 250353, Peoples R China

[4] Shandong Urban Construction Vocat Coll, Dept Municipal & Equipment Engn, Jinan 250103, Peoples R China

[5] Shandong Res Inst Ind Technol, Jinan 250100, Shandong, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2024年 / 653卷

基金：

中国国家自然科学基金;

关键词：

GaN; Chemical mechanical polishing; Subsurface damage; Atomic step structure; Roughness; GALLIUM NITRIDE; FABRICATION; ABRASIVES;

D O I：

10.1016/j.apsusc.2024.159396

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A remarkable improvement in the chemical-mechanical polishing (CMP) of GaN using a weakly alkaline ZrO2-SiO2 based slurry is described in detail, and an almost complete atomic step-platform structure with a surface roughness (Ra) of 0.059 nm is obtained. ZrO2 nanoparticles were added to the CMP slurry to replace part of the SiO2 to obtain a higher removal rate. When the content of ZrO2 reaches 0.5 wt%, the material removal rate of GaN is increased by 47.5 % compared with that of SiO2 with equal content, which significantly improves the material removal rate (MRR) of GaN, and does not destroy the atomic ladder-platform structure. In addition, we also investigate the causes of the formation of atomic ladder-terrace morphology on Ga-face, and describe the removal mechanism of materials in CMP process.

引用

页数：8

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