Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) have the advantagesoflow-cost, large-area processing and could be utilized in a varietyof emerging applications. However, the generally large contact resistance(R (c)) limits the integration and miniaturizationof OFETs. The R (c) is difficult to reducedue to an incompatibility between obtaining strong orbit couplingand the barrier height reduction. In this study, we developed an oxygen-inducedbarrier lowering strategy by introducing oxygen (O-2) intothe nanointerface between the electrodes and organic semiconductorslayer and achieved an ultralow channel width-normalized R (c) (R (c)& BULL;W) of 89.8 & omega;& BULL;cm and a high mobility of 11.32 cm(2) V-1 s(-1). This work demonstratesthat O-2 adsorbed at the nanointerface of metal-semiconductorcontact can significantly reduce the R (c) from both experiments and theoretical simulations and provides guidancefor the construction of high-performance OFETs, which is conduciveto the integration and miniaturization of OFETs.