Investigation of the Influence of Temperature on Stress Waves at the Turn-Off Moment in IGBT

被引：0
|
作者：
Geng, Xuefeng [1 ]
He, Yunze [1 ]
Wang, Guangxin [1 ]
Tang, Longhai [1 ]
Li, Qiying [1 ]
Liu, Songyuan [1 ]
机构：
[1] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2023年 / 72卷
基金：
中国国家自然科学基金;
关键词：
Temperature measurement; Insulated gate bipolar transistors; Stress; Temperature sensors; Power semiconductor devices; Junctions; Temperature; Extraction; insulated gate bipolar transistor (IGBT); stress wave; temperature; turn-off; ACOUSTIC-EMISSION; POTENTIAL DEFECTS; FATIGUE;
D O I：
10.1109/TIM.2022.3231264
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Condition monitoring (CM) technology plays an important role in ensuring the reliable operation of power semiconductor devices. Power semiconductor devices can generate stress waves when turned on and off, and the stress waves released by the device can be detected by the acoustic emission (AE) sensor. AE detection technology has the characteristics of both nondestructive and real-time, and is expected to be applied to the CM of power semiconductor devices in the future. However, temperature and electromagnetic fields can both affect the output characteristics of the AE sensor, which is not conducive to the application of AE detection technology. In addition, it is not clear how temperature affects the stress waves generated by power semiconductor devices. In this article, a novel stress wave extraction method for power semiconductor devices is proposed, and the influence of temperature on the stress wave generated by insulated gate bipolar transistor (IGBT) at the turn-off moment is explored. Besides, a signal characteristic of the stress waves associated with the junction temperature of the device is extracted as the temperature-sensitive acoustic parameter, which will lay the foundation for the future research of new methods for online monitoring of junction temperature.
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页数：9
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