Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure

被引：6
|
作者：
Vadizadeh, Mahdi [1 ]
Fallahnejad, Mohammad [2 ]
Shaveisi, Maryam [3 ]
Ejlali, Reyhaneh [2 ]
Bajelan, Farshad [1 ]
机构：
[1] Islamic Azad Univ, Dept Elect Engn, Abhar Branch, Abhar, Iran
[2] Islamic Azad Univ, Dept Elect Engn, Cent Tehran Branch, Tehran, Iran
[3] Kermanshah Univ Technol, Dept Elect Engn, Kermanshah, Iran
来源：
SILICON | 2023年 / 15卷 / 02期
关键词：
Low-noise amplifier (LNA); Double gate double-channel; High electron mobility transistor (HEMT); Noise figure (NF); FIELD-EFFECT TRANSISTORS; FREQUENCY; DESIGN; CAPACITANCE; PARAMETERS; AMPLIFIERS; IMPACT;
D O I：
10.1007/s12633-022-02083-x
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The manuscript proposes a novel double gate double-channel AlGaN/GaN MOS high electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) applications. Double-channel structure importance on high-frequency noise and analog/RF performance of AlGaN/GaN HEMT have been explored in this work through TCAD device simulations. The existence of lower channels improves the transconductance (g(m)), unity gain cut-off frequency (f(T)), and minimum noise figure (NFmin) of DG-DC-MOS-HEMT compared to DG-MOS-HEMT. The DG-DC-MOS-HEMT with channel length of 220 nm exhibits g(m) of 0.85mS/um, f(T) of 137GHz, and NFmin of 0.21 dB. For the first time in this paper, an LNA using DG-DC-MOS-HEMT has been designed for X-Band radar applications. An s2p model is developed for DG-DC-MOS-HEMT and the models are incorporated into the ADS simulator to utilize the proposed device in circuit simulations. Comparing the results of LNA by DG-DC-MOS-HEMT with LNA by DG-MOS-HEMT at f = 10GHz, an increase of 56% and 36%, respectively, in noise figure (NF) and forward voltage gain (S-21), was found. This paper gives an opportunity to attain high-performance LNA with the proposed DG-DC-MOS-HEMT.
引用
收藏
页码：1093 / 1103
页数：11
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