Elastic integrated electronics based on a stretchable n-type elastomer-semiconductor-elastomer stack

被引:21
|
作者
Shim, Hyunseok [1 ,2 ,3 ]
Sim, Kyoseung [4 ,5 ,6 ]
Wang, Binghao [7 ]
Zhang, Yongcao [2 ]
Patel, Shubham [1 ,4 ]
Jang, Seonmin [1 ,2 ]
Marks, Tobin J. J. [8 ,9 ]
Facchetti, Antonio [8 ,9 ,10 ]
Yu, Cunjiang [1 ,2 ,4 ,11 ,12 ]
机构
[1] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA
[2] Univ Houston, Mat Sci & Engn Program, Houston, TX 77204 USA
[3] Pusan Natl Univ, Dept Elect Engn, Busan, South Korea
[4] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA
[5] Ulsan Natl Inst Sci & Technol UNIST, Dept Chem, Ulsan, South Korea
[6] Ulsan Natl Inst Sci & Technol UNIST, Ctr Wave Energy Mat, Ulsan, South Korea
[7] Southeast Univ, Sch Elect Sci & Engn, Joint Int Res Lab Informat Display & Visualizat, Nanjing, Peoples R China
[8] Northwestern Univ, Dept Chem, Evanston, IL USA
[9] Northwestern Univ, Mat Res Ctr, Evanston, IL USA
[10] Flexterra Inc, Skokie, IL USA
[11] Penn State Univ, Dept Biomed Engn, University Pk, PA 16802 USA
[12] Penn State Univ, Mat Res Inst, Dept Mat Sci & Engn, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; PERFORMANCE; FABRICATION; CIRCUITS;
D O I
10.1038/s41928-023-00966-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An elastomer-semiconductor-elastomer stack structure can allow an intrinsically brittle n-type organic semiconductor to be stretched by 50% and used to make fully stretchable complementary electronics. Elastic integrated electronics are of potential use in a range of emerging applications, particularly those that require devices that can form an interface with soft biological tissue. The development of such devices has typically focused on the creation of stretchy p-type semiconductors, and the lack of suitable stretchy n-type semiconductors limits the potential of stretchable integrated systems. Here we show that a brittle n-type organic semiconductor can be made mechanically stretchable by integrating into a stack with an elastomer-semiconductor-elastomer architecture. The structure suppresses the formation and propagation of microcracks and can be stretched by up to 50% with negligible loss of performance. It also improves the long-term stability of the semiconductor in an ambient environment. We use the n-type elastomer-semiconductor-elastomer stack, together with other stretchy electronic materials, to build elastic transistors, digital logic gates, complementary electronics, p-n photodetectors and an active matrix multiplexed deformable imager.
引用
收藏
页码:349 / 359
页数:11
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