Facile construction of g-C3N4/MnWO4/NiS heterostructures for photocatalytic degradation of organic contaminates under visible light irradiation

被引：27
|
作者：
Khudhair, Entisar M. [1 ]
Ammar, Saad H. [2 ,3 ]
Al-Najjar, Shahad Z. [2 ]
Al-Jubouri, Sama M. [1 ]
Mahdi, Ahmed S. [4 ]
Jabbar, Zaid H. [5 ]
机构：
[1] Univ Baghdad, Coll Engn, Dept Chem Engn, Baghdad, Iraq
[2] Al Nahrain Univ, Coll Engn, Dept Chem Engn, Baghdad, Iraq
[3] Univ Warith Al Anbiyaa, Coll Engn, Karbala, Iraq
[4] Minist Ind & Minerals, State Co Food Prod, Baghdad, Iraq
[5] Al Mustaqbal Univ Coll, Bldg & Construct Tech Engn Dept, Hillah 51001, Babylon, Iraq
来源：
MATERIALS LETTERS | 2023年 / 347卷
关键词：
g-C3N4; Heterojunction; Charge transfer; Photodegradation;
D O I：
10.1016/j.matlet.2023.134599
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Assembling of a new ternary heterojunction (g-C3N4/MnWO4/NiS) is reported here. As a result, the g-C3N4/ MnWO4/NiS exhibited numerous benefits, such as outstanding visible light absorption, high carrier separation, and therefore, boosted photodegradation performance (96.7% of methylene blue, MB) compared to g-C3N4, and MnWO4. The contact region between g-C3N4 and MnWO4 efficiently accomplishes rapid separation of charge carriers through NiS cocatalyst, creating binding sites between g-C3N4 and MnWO4 semiconductors. The mechanisms for the photocatalytic degradation over the g-C3N4/MnWO4/NiS heterostructure are suggested and verified.
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页数：5
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