High-performance nano-scale InSnO transistors

Nanoscale short-channel oxide thin film transistors (TFTs) have attracted widespread research interest due to their potential applications in advanced display and memory devices. In this work, we fabricate 10 mu m channel length indium-tin-oxide (ITO) TFTs and analyze the uniformity and repeatability of ITO TFTs at the long channel range. Then we fabricate ITO TFTs with a series of channel lengths ranging from 10 mu m to 150 nm and through an optimized process we finally fabricate 130 nm channel length high-performance ITO TFTs with an on-state current of 93 (mu A/mu m), a subthreshold swing of 102 (mV decade-1), and on/off ratio over 107 at a drain voltage of 3 V.