Enhance the Electrical and Photoelectrical Performance of MoS2Transistor With Polyimide Gate Dielectric by Microwave Annealing

被引：2

作者：

Zhang, Yifei ^{[1
]}

Su, Xing ^{[1
]}

Cui, Siwei ^{[1
]}

Yang, Hui ^{[2
]}

Wu, Dongping ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 04期

基金：

中国国家自然科学基金;

关键词：

High performance; microwave annealing (MWA); MoS(2 )transistor; polyimide (PI) gate dielectric; MOS2; TRANSISTORS; FABRICATION; HETEROJUNCTION; PHOTODETECTOR; CONTACT; FETS;

D O I：

10.1109/TED.2024.3367311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through a low-cost approach, molybdenum disulfide (MoS2) transistors with polyimide (PI) dielectric layer that is more compatible with flexible electronics have been prepared, and microwave annealing (MWA) has been employed to enhance the electrical and photoelectrical performance of the device. The device, after undergoing a low temperature (135.6(degrees)) and short -duration (60 s) MWA process, demonstrates excellent electrical performance, with an OFF -state current as low as 5 fA, an ON -state current of 456 nA, and an ON/OFF ratio of up to 9.12 x 10(7). Additionally, a study on the photoelectrical performance of the device has been conducted. The device's responsivity (R), detectivity (D-& lowast;), and external quantum efficiency (EQE) were measured at impressive values of 807 A/W, 5.5 x 1010 Jones, and 2.2% x 103%, respectively. This work extends the application of PI as a dielectric material in 2-D optoelectronic transistors.

引用

页码：2736 / 2741

页数：6

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