Thermal transport of graphene-C3B superlattices and van der Waals heterostructures: a molecular dynamics study

被引:0
|
作者
Zhang, Guangzheng [1 ]
Dong, Shilin [1 ]
Wang, Xinyu [2 ]
Xin, Gongming [1 ]
机构
[1] Shandong Univ, Sch Energy & Power Engn, Jinan 250061, Peoples R China
[2] Shandong Univ, Inst Thermal Sci & Technol, Jinan 250061, Peoples R China
基金
中国国家自然科学基金;
关键词
superlattice; vdW heterostructure; thermal conductivity; interfacial thermal resistance; molecular dynamics; MONOLAYER; CONDUCTIVITY; CONDUCTANCE;
D O I
10.1088/1361-6528/ad06d0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) materials have attracted more and more attention due to their excellent properties. In this work, we systematically explore the heat transport properties of Graphene-C3B (GRA-C3B) superlattices and van der Waals (vdW) heterostructures using molecular dynamics method. The effects of interface types and heat flow directions on the in-plane interfacial thermal resistance (ITRip) are analyzed. Obvious thermal rectification is detected in the more energy stable interface, GRA zigzag-C3B zigzag (ZZ) interface, which also has the minimum value of ITRip. The dependence of the superlattices thermal conductivity (k) of the ZZ interface on the period length (l(p)) is investigated. The results show that when the l(p) is 3.5 nm, the k reaches a minimum value of 35.52 W m(-1) K-1, indicating a transition stage from coherent phonon transport to incoherent phonon transport. Afterwards, the effects of system size, temperature, coupling strength and vacancy defect on the out-of-plane interfacial thermal resistance (ITRop) are evaluated. With the increase of temperature, coupling strength and vacancy defect, ITRop are found to reduce effectively due to the enhanced Umklapp phonon scattering and increased probability of energy transfer. Phonon density of states and phonon participation ratio is evaluated to reveal phonon behavior during heat transport. This work is expected to provide essential guidance for the thermal management of nanoelectronics based on 2D monolayer GRA and C3B.
引用
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页数:11
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