Anomalous Hall effect in disordered Weyl semimetals

We study the anomalous Hall effect in a disordered Weyl semimetal. While the intrinsic contribution is expressed solely in terms of Berry curvature, the extrinsic contribution is given by a combination of the skewscattering and side-jump terms. For the model of small-size impurities, we are able to express the skew-scattering contribution in terms of scattering phase shifts. We identify the regime in which the skew-scattering contribution dominates the side-jump contribution: the impurities are either strong or resonant and at dilute concentration. In this regime, the Hall resistivity & rho;xy is expressed in terms of two scattering phases, analogous to the s-wave scattering phase in a nontopological metal. We compute the dependence of & rho;xy on the chemical potential and show that & rho;xy scales with temperature as T2 in low temperatures and as T3/2 in the high-temperature limit.