Electron transport in a weakly disordered Weyl semimetal

被引:0
|
作者
Ismagambetov, M. E. [1 ]
Ostrovsky, M. [1 ,2 ]
机构
[1] Max Planck Inst Solid State Res, Stuttgart 70569, Germany
[2] Karlsruhe Inst Technol, TKM, D-76131 Karlsruhe, Germany
关键词
DEGENERATE SEMICONDUCTORS; CRITICAL-BEHAVIOR;
D O I
10.1103/PhysRevB.108.214201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Weyl semimetal is a solid material with isolated touching points between conduction and valence bands in its Brillouin zone-Weyl points. Low-energy excitations near these points exhibit a linear dispersion and act as relativistic massless particles. Weyl points are stable topological objects robust with respect to most perturbations. We study effects of weak disorder on the spectral and transport properties of Weyl semimetals in the limit of low energies. We use a model of Gaussian white-noise potential and apply dimensional regularization scheme near three dimensions to treat divergent terms in the perturbation theory. In the framework of self-consistent Born approximation, we find closed expressions for the average density of states and conductivity. Both quantities are analytic functions in the limit of zero energy. We also include interference terms beyond the self-consistent Born approximation up to the third order in the disorder strength. These interference corrections are stronger than the mean-field result and nonanalytic as functions of energy. Our main result is the dependence of conductivity (in units e2/h) on the electron concentration sigma = sigma 0 - 0.891 n1/3 + 0.115 (n2/3/sigma 0) ln |n|.
引用
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页数:12
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