Will Better Sintering Quality of Ag Nanoparticles Lead to More Reliable Ag Bonding Interfaces?

被引:0
|
作者
Sun, Baorui [1 ]
Zhang, Minghui [2 ,3 ]
Li, Junjie [2 ,3 ]
Li, Zhe [2 ]
Wen, Mingli [4 ]
Liu, Zhi-Quan [2 ]
机构
[1] Hebei Semicond Res Inst, Shijiazhuang 050051, Peoples R China
[2] Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518100, Peoples R China
[3] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[4] Jian Hotchain Technol Co Ltd, Jian 343900, Peoples R China
基金
中国国家自然科学基金;
关键词
Ag nanoparticles; sintering; pressureless bonding; die-attach; power semiconductors; NANO-SILVER JOINTS; LOW-TEMPERATURE; DIE-ATTACH; POWER DEVICES; THERMOMECHANICAL RELIABILITY; PASTE; PB;
D O I
10.1007/s11664-023-10677-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ag sintering technology for die-attach application in power semiconductors has garnered significant attention in recent years due to its excellent high-temperature service reliability. In this study, a highly reliable bonding joint was achieved using a specific Ag paste, resulting in shear strength of 37.63 MPa after pressureless bonding at 250 & DEG;C for 10 min. However, a significant reduction in bonding strength was observed when using another set of Ag paste with better sintering performance. To investigate this anomalous phenomenon, we have performed a series of characterizations and proposed a corresponding bonding formation mechanism. The conclusions and inferences drawn from this study offer valuable theoretical support for the further application of Ag sintering, thereby promoting the advancement of this technology.
引用
收藏
页码:7475 / 7483
页数:9
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