Optical polishing and characterization of chemical vapour deposited silicon carbide mirrors for space applications

被引:6
|
作者
Jalluri, Tayaramma D. P. V. [1 ,2 ]
Rao, B. Vishweshwar [1 ]
Rudraswamy, B. [2 ]
Venkateswaran, R. [1 ]
Sriram, K. V. [1 ]
机构
[1] Indian Space Res Org, Lab Electroopt Syst LEOS, Bangalore 560058, Karnataka, India
[2] Bangalore Univ, Dept Phys, Mysore Rd, Bangalore 560056, Karnataka, India
来源
JOURNAL OF OPTICS-INDIA | 2023年 / 52卷 / 03期
关键词
Sintered SiC; CVD SiC; Telescope optics; Surface figure; Surface roughness; Space qualification tests; FABRICATION;
D O I
10.1007/s12596-022-00925-w
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Silicon Carbide (SiC) is a well-recognized material, wherein its thermo-mechanical properties, radiation and abrasion resistance make it more attractive to produce high stiff space telescope mirrors that are thermally and dimensionally stable for space applications. However, the extreme hardness of SiC renders it difficult to machine and attain high optical surface quality. In recent years, chemical vapour deposited SiC (CVD SiC) has been successfully used as telescope mirror components for ground and space applications. Indigenous manufacturing of CVD SiC blanks based on sintering and cold-isostatic approach is already established and sizes of 0.7 m of SiC blanks can be realized. However, the optical process technologies to grind and polish the large sized CVD SiC to high accuracies need to established. The aim of this present investigation is to develop an appropriate grinding and polishing procedure which is scalable for medium to large sized CVD SiC blanks to obtain high surface quality. Process trials were carried out on CVD SiC substrates using composite tools with a variety of boron carbide and diamond abrasives for grinding and polishing to arrive at an appropriate recipe for these processes. The optimal procedure established for CVD SiC processing is successfully tested for several flat and curved surfaces, including a hyperbolic conical surface. The optical metrology is done using a Zygo's Fizeau interferometer for surface figure assessment and Bruker's white light interferometer for surface micro-roughness evaluation. The surface figure and micro-roughness values achieved using the developed optical processes are of the order of 15 nm RMS and 10 angstrom RMS, respectively. Detailed microstructural characterization studies using SEM and EDX are also carried out. The results of qualification tests conducted on the CVD SiC to make it amenable for space use are also described.
引用
收藏
页码:969 / 983
页数:15
相关论文
共 50 条
  • [21] Polishing characteristics of silicon carbide by plasma chemical vaporization machining
    Sano, Yasuhisa
    Watanabe, Masayo
    Yamamura, Kazuya
    Yamauchi, Kazuto
    Ishida, Takeshi
    Arima, Kenta
    Kubota, Akihisa
    Mori, Yuzo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10B): : 8277 - 8280
  • [22] Green-chemical-jump-thickening polishing for silicon carbide
    Li, Min
    Xie, Jiancheng
    CERAMICS INTERNATIONAL, 2022, 48 (01) : 1107 - 1124
  • [23] Luminescent nanocrystalline silicon carbide thin film deposited by helicon wave plasma enhanced chemical vapour deposition
    Lu, Wan-Bing
    Yu, Wei
    Wu, Li-Ping
    Cui, Shuang-Kui
    Fu, Guang-Sheng
    Chinese Journal of Aeronautics, 2006, 19 (SUPPL.):
  • [25] Investigating the thermal stability of the chemical vapour deposited zirconium carbide layers
    Biira, Saphina
    Thabethe, T. T.
    Hlatshwayo, T. T.
    Bissett, H.
    Ntsoane, T.
    Malherbe, J. B.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 834
  • [26] Characterization of hydrogenated Silicon carbide produced by plasma enhanced chemical vapour deposition at low temperature
    Pareschi, G.
    Taglioni, G.
    Basso, S.
    Citterio, O.
    De Caprio, V.
    Ghigo, M.
    Novella, L.
    Novi, A.
    Spiga, D.
    Stringhetti, L.
    OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III, 2007, 6666
  • [27] Characterization of oxides on silicon carbide deposited by remote plasma enhanced chemical vapor deposition
    Golz, A
    Janssen, R
    von Kamienski, ES
    Kurz, H
    PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 1996, 96 (01): : 753 - 758
  • [28] Microhardness and surface roughness of silicon carbide by chemical vapour deposition
    Kim, DJ
    Choi, DJ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1997, 16 (04) : 286 - 289
  • [29] Coating of activated carbon with silicon carbide by chemical vapour deposition
    Delft Univ of Technology, Delft, Netherlands
    Carbon, 5 (567-579):
  • [30] Coating of activated carbon with silicon carbide by chemical vapour deposition
    Moene, R
    Boon, HT
    Schoonman, J
    Makkee, M
    Moulijn, JA
    CARBON, 1996, 34 (05) : 567 - 579