All-silicon quantum light source by embedding a single color center in a nanophotonic cavity

被引：0

作者：

Qarony, W. ^{[1
]}

Redjem, W. ^{[1
]}

Zhiyenbayev, Y. ^{[1
]}

Ivanov, V. ^{[2
]}

Papapanos, C. ^{[1
]}

Liu, W. ^{[3
]}

Jhuria, K. ^{[3
]}

Al Balushi, Z. Y. ^{[4
,5
]}

Dhuey, S. ^{[2
]}

Schwartzberg, A. ^{[2
]}

Tan, L. Z. ^{[2
]}

Schenkel, T. ^{[3
]}

Kante, B. ^{[1
,5
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA

[3] Lawrence Berkeley Natl Lab, Accelerator Technol & Appl Phys Div, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA

来源：

2023 IEEE PHOTONICS CONFERENCE, IPC | 2023年

关键词：

All-silicon; quantum light source; single color center; Purcell enhancement; source acceleration;

D O I：

10.1109/IPC57732.2023.10360655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the first all-silicon quantum light source by integrating a silicon-based single color center within a silicon nanophotonic cavity. This approach results in a remarkable 30-fold increase in luminescence and an 8-fold emission acceleration, enabling scalable quantum technologies for communication, sensing, imaging, and computing.

引用

页数：2

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