Enhanced dielectric/ferroelectric properties of P(VDF-TrFE) composite films with organic perovskite ferroelectrics

被引：3

作者：

Li, Chaoyang ^{[1
]}

Cai, Yichen ^{[1
]}

Xie, Yongfa ^{[2
]}

Sheng, Chenxu ^{[1
]}

Qin, Yajie ^{[1
]}

Cong, Chunxiao ^{[1
]}

Qiu, Zhi-Jun ^{[1
]}

Liu, Ran ^{[1
]}

Hu, Laigui ^{[1
]}

机构：

[1] Fudan Univ, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China

[2] Nanchang Univ, Sch Chem & Chem Engn, Nanchang 330031, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 03期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

orgainc ferroelectrics; ferroelectric thin films; organic ferroelectric composite films; dielectric properties; POLY(VINYLIDENE FLUORIDE); DIELECTRIC PERMITTIVITY; PVDF; PHASE;

D O I：

10.35848/1882-0786/acc569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With excellent stability, flexibility, and piezoelectricity, poly(vinylidene fluoride) (PVDF) and its copolymer [P(VDF-TrFE)] have received much attention. However, the applications for its ferroelectricity still suffer the drawbacks of relative low remanent polarization (P (r)) and high coercive electric field (E (c)). In this work, P(VDF-TrFE) composite films were fabricated with the additive of organic perovskite ferroelectric MDABCO-NH4I3. Compared with pure P(VDF-TrFE), the P (r) increases from 7.17 to 12.7 mu C cm(-2), while E (c) decreases from 516 to 324 kV cm(-1) as well as increased permittivity from 15.6 to 37.0. These may provide an alternative way for ferroelectric memory, sensors, and energy storage devices.

引用

页数：5

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