A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With off-State Harmonic Control

被引：3

作者：

Pampori, Ahtisham ^{[1
]}

Nazir, Mohammad Sajid ^{[1
]}

Dangi, Raghvendra ^{[1
]}

Chou, Min Li ^{[2
]}

Lee, Geng Yen ^{[2
]}

Chauhan, Yogesh Singh ^{[1
]}

机构：

[1] Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India

[2] Wavetek Microelect Corp, Hsinchu 300091, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 01期

关键词：

Compact model; dual-gate RF switch; large-signal model; serpentine gate; SPICE model; MOSFET MODEL; TRANSISTORS;

D O I：

10.1109/TED.2023.3321015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we present a large-signal width-scalable physics-based SPICE-compatible compact model for gallium nitride (GaN)-based dual-gate RF switches with improved harmonic control in the OFF-regime. The bias dependence of device capacitances is improved to offer accurate large-signal compression and harmonic-balance simulations in both the ON-and OFF-state. The distributed nature of the serpentine gate in these devices is captured using a robust gate network. Calibrated EM models have been used to incorporate the impact of manifolds on the RF performance of these devices. The model is validated against experimental data from multiple 0.5 m node, dual-gate depletion-mode GaN-on-Si switch devices.

引用

页码：84 / 90

页数：7

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