Optical transparency in 2D ferromagnetic WSe2/1T-VSe2/WSe2 multilayer with strain induced large anomalous Nernst conductivity

被引:2
|
作者
Khan, Imran [1 ]
Marfoua, Brahim [1 ]
Hong, Jisang [1 ]
机构
[1] Pukyong Natl Univ, Dept Phys, Busan 48513, South Korea
基金
新加坡国家研究基金会;
关键词
optical transparency; 2D magnetism; anomalous Hall effect; anomalous Nernst effect; TOTAL-ENERGY CALCULATIONS; MONOLAYER; TEMPERATURE; CRYSTAL;
D O I
10.1088/1361-6528/ad12e8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Transparent two-dimensional (2D) magnetic materials may bring intriguing features and are indispensable for transparent electronics. However, it is rare to find both optical transparency and room-temperature ferromagnetism simultaneously in a single 2D material. Herein, we explore the possibility of both these features in 2D WSe2/1T-VSe2 (1ML)/WSe2 and WSe2/1T-VSe2 (2ML)/WSe2 heterostructures by taking one monolayer (1ML) and two monolayers (2ML) of 1T-VSe2 using first-principles calculations. Further, we investigate anomalous Hall conductivity (AHC) and anomalous Nernst conductivity (ANC) using a maximally localized Wannier function. The WSe2/1T-VSe2 (1ML)/WSe2 and WSe2/1T-VSe2 (2ML)/WSe2 systems show Curie temperatures of 328 and 405 K. Under biaxial compressive strain, the magnetic anisotropy of both systems is switched from in-plane to out-of-plane. We find a large AHC of 1.51 e(2)/h and 3.10 e(2)/h in the electron-doped region for strained WSe2/1T-VSe2 (1ML)/WSe2 and WSe2/1T-VSe2 (2ML)/WSe2 systems. Furthermore, we obtain a giant ANC of 3.94 AK(-1) m(-1) in a hole-doped strained WSe2/1T-VSe2 (2ML)/WSe2 system at 100 K. Both WSe2/1T-VSe2 (1ML)/WSe2 and WSe2/1T-VSe2 (2ML)/WSe2 are optically transparent in the visible ranges with large refractive indices of 3.2-3.4. Our results may suggest that the WSe2/1T-VSe2/WSe2 structure possesses multifunctional physical properties and these features can be utilized for spintronics and optoelectronics device applications such as magnetic sensors, memory devices, and transparent magneto-optic devices at room temperature.
引用
收藏
页数:11
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