Towards higher current and voltage LCLs

被引：0

作者：

Marroqui, David ^{[1
]}

Garrigos, Ausias ^{[1
]}

Blanes, Jose M. ^{[1
]}

Maset, Enrique ^{[2
]}

Orts, Carlos ^{[1
]}

Torres, Cristian ^{[1
]}

Casado, Pablo ^{[1
]}

机构：

[1] Miguel Hernandez Univ Elche, Ind Elect Grp IEg, Elche, Spain

[2] Univ Valencia, Instrumentat & Ind Elect Lab, Valencia, Spain

来源：

2023 13TH EUROPEAN SPACE POWER CONFERENCE, ESPC | 2023年

关键词：

LCL; PDU; cascode; 300V; SiC; JFET; WBG;

D O I：

10.1109/ESPC59009.2023.10298130

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

LCLs are widely used devices for power control and distribution in satellites. Traditionally, P-type MOSFETs have been used due to their simplicity from the control perspective. Actual ESA standard defines LCLs up to class 10 (10A) and 50V. However, 100V bus voltage is common in high power platforms and the current trend is to increase even more this value, around 300V. In this new scenario, the classic concept of LCL design needs to be revised, and this work proposes a simple alternative for P-type MOSFETs that operates at high voltage and can be easily scaled up in current.

引用

页数：6

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