Buried-Electrode Hybrid Bonded Thin-Film Lithium Niobate Electro-Optic Mach-Zehnder Modulators

被引：2

作者：

Valdez, Forrest ^{[1
]}

Mere, Viphretuo ^{[2
]}

Boynton, Nicholas ^{[3
]}

Friedmann, Thomas A. ^{[4
]}

Arterburn, Shawn ^{[5
]}

Dallo, Christina ^{[6
]}

Pomerene, Andrew T. ^{[7
]}

Starbuck, Andrew L. ^{[8
]}

Trotter, Douglas C. ^{[9
]}

Lentine, Anthony L. ^{[10
]}

Kodigala, Ashok ^{[11
]}

Mookherjea, Shayan ^{[12
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA USA

[3] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[4] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[5] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[6] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[7] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[8] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[9] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[10] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[11] Sandia Natl Labs, Appl Microphoton Syst, Albuquerque, NM USA

[12] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 11期

基金：

美国国家科学基金会;

关键词：

Electrodes; Radio frequency; Gold; Optical device fabrication; Voltage measurement; Optical films; Indexes; Lithium niobate; modulator; electro-optic; thin-film; electrode; silicon-on-insulator; hybrid integrated circuits; SILICON;

D O I：

10.1109/LPT.2023.3268605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hybrid bonded silicon nitride thin-film lithium niobate (TFLN) Mach-Zehnder modulators (MZMs) at 1310 nm were designed with metal coplanar waveguide electrodes buried in the silicon-on-insulator (SOI) chip. The MZM devices showed greatly improved performance compared to earlier devices of a similar design, and similar performance to comparable MZM devices with gold electrodes made on top of the TFLN layer. Both devices achieve a 3-dB electro-optic bandwidth greater than 110 GHz and voltage-driven optical extinction ratios greater than 28 dB. Half-wave voltage-length products (Vp L) of 2.8 and 2.5 V.cm were measured for the 0.5 and 0.4 cm long buried metal and top gold electrode MZMs, respectively.

引用

页码：633 / 636

页数：4

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