Numerical investigation of MAPbI3 perovskite solar cells for performance limiting parameters

被引:9
|
作者
Prasanna, J. Lakshmi [1 ]
Goel, Ekta [1 ]
Kumar, Amarjit [1 ]
机构
[1] NIT Warangal, Dept Elect & Commun Engn, Hanamkonda 506004, Telangana, India
关键词
Perovskites solar cell; Shockley-Queisser limit; SCAPS; Simulation; Shunt resistance; FF-deficit; HALIDE PEROVSKITES; HIGHLY EFFICIENT; INTERFACE; STABILITY; GAP; LIFETIMES; LENGTHS;
D O I
10.1007/s11082-023-04876-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study employed a simulation-based approach for probing the performance-limiting parameters. Comparative observation of performance parameters with corresponding Shockley-Queisser limit values highlight a significant deficit in fill factor and open-circuit voltage (V-OC) of perovskite solar cells (PSCs). This work identifies parameters such as carrier concentration, sheet resistance, and internal recombination responsible for these FF deficits in contemporary PSC. Simulation of illumination-dependent FF for these design parameters gives insight into the optimal range of parameters, which ought to be crucial to stabilize and enhance the device's performance. PSCs are sensitive toward shunt resistance and experimental PSC devices must have R-Sh above 5 K ohm cm(2) for optimal FF and V-OC values. We observed that FF is optimal in mid-carrier concentration around the range of similar to 10(16) cm(-3). This optimal FF could be due to the interplay between resistivity, Shockley-Read-Hall recombination and Auger recombination at these carrier densities. We summarize pathways such as shunt resistance values, carrier concentration, and back contact optimization work function to maximize FF in PSC. The optimized device with the derived design parameters has achieved a V-oc, J(sc), FF and PCE of 1.3248 V, 22.93 mA/cm(2), 79.39% and 23.22% respectively.
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页数:21
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