Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film

被引：1
|
作者：
Lee, Dong Hyun [1 ]
Park, Geun Hyeong [1 ]
Kim, Se Hyun [1 ]
Yang, Kun [1 ]
Lee, Jaewook [1 ]
Choi, Hyojun [1 ]
Lee, Younghwan [2 ]
Ryu, Jin Ju [3 ,4 ]
Lee, Je In [5 ]
Kim, Gun Hwan [3 ,6 ]
Park, Min Hyuk [1 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea
[3] Korea Res Inst Chem Technol KRICT, Div Adv Mat, Daejeon 34114, South Korea
[4] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea
[5] Pusan Natl Univ, Sch Mat Sci & Engn, Busan 46241, South Korea
[6] Yonsei Univ, Sch Syst & Semicond Engn, Seoul 03722, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Switches; Electrodes; Kinetic theory; Tin; Capacitors; Pulse measurements; Grain size; Ferroelectrics; Hafnium zirconium oxide; ferroelectric memory; domain dynamics;
D O I：
10.1109/LED.2023.3294522
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrode materials can significantly impact the chemical and physical properties and polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 (HZO) films deposited through atomic layer deposition. In this study, the effect of various electrode materials (TiN, Mo, and W) on the microstructure and polarization switching properties of HZO films is investigated. The nucleation-limited switching model indicates that the Mo electrode is beneficial in the case of small device-to-device variation, whereas W and TiN electrodes are advantageous for accomplishing high-speed operations.
引用
收藏
页码：1440 / 1443
页数：4
相关论文
共 50 条
  • [41] Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface
    Dmitriyeva, Anna
    Mikheev, Vitalii
    Zarubin, Sergei
    Chouprik, Anastasia
    Vinai, Giovanni
    Polewczyk, Vincent
    Torelli, Piero
    Matveyev, Yury
    Schlueter, Christoph
    Karateev, Igor
    Yang, Qiong
    Chen, Zhaojin
    Tao, Lingling
    Tsymbal, Evgeny Y.
    Zenkevich, Andrei
    ACS NANO, 2021, 15 (09) : 14891 - 14902
  • [42] Persistent spin texture in ferroelectric Hf0.5Zr0.5O2
    Li, Huinan
    Chen, Xu
    Zhang, Qin
    Dou, Mingbo
    Yu, Yue
    Zhuravlev, M. Ye.
    Nikolaev, A. V.
    Wang, Xianjie
    Tao, L. L.
    APPLIED PHYSICS LETTERS, 2024, 124 (12)
  • [43] Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
    Hamouda, W.
    Pancotti, A.
    Lubin, C.
    Tortech, L.
    Richter, C.
    Mikolajick, T.
    Schroeder, U.
    Barrett, N.
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (06)
  • [44] Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
    Chernikova, Anna
    Kozodaev, Maksim
    Markeev, Andrei
    Negrov, Dmitrii
    Spiridonov, Maksim
    Zarubin, Sergei
    Bak, Ohheum
    Buraohain, Pratyush
    Lu, Haidong
    Suvorova, Elena
    Gruverman, Alexei
    Zenkevich, Andrei
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (11) : 7232 - 7237
  • [45] Improved Ferroelectric Switching Endurance of La -Doped Hf0.5Zr0.5O2 Thin Films
    Chernikova, Anna G.
    Kozodaev, Maxim G.
    Negrov, Dmitry V.
    Korostylev, Evgeny V.
    Park, Min Hyuk
    Schroeder, Uwe
    Hwang, Cheol Seong
    Markeev, Andrey M.
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (03) : 2701 - 2708
  • [46] Switching Dynamics Analysis by Various Models of Hf0.5Zr0.5O2 Ferroelectric Thin Films
    Ahn, Seung-Eon
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2020, 30 (02): : 99 - 104
  • [47] Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
    Huang, Fei
    Saini, Balreen
    Yu, Zhouchangwan
    Yoo, Chanyoung
    Thampy, Vivek
    He, Xiaoqing
    Baniecki, John D.
    Tsai, Wilman
    Meng, Andrew C.
    Mcintyre, Paul C.
    Wong, Simon
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (43) : 50246 - 50253
  • [48] Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor
    Li, Hongbo
    Zhang, Jian
    Guo, Chongyong
    Liu, Yuanya
    Liu, Chunyan
    Wang, Yu
    Li, Jianjun
    Yuan, Hui
    Jin, Xingcheng
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (10)
  • [49] Polarization enhancement in Hf0.5Zr0.5O2 capacitors induced by oxygen vacancies at elevated temperatures
    Zhang, Zichong
    Wang, Chengxu
    Yang, Yifan
    Miao, Xiangshui
    Wang, Xingsheng
    APPLIED PHYSICS LETTERS, 2023, 122 (15)
  • [50] A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate
    Liu, Xingpeng
    Wei, Chunshu
    Zhang, Fabi
    Peng, Ying
    Sun, Tangyou
    Peng, Yiming
    Tang, Huiping
    Yang, Junfeng
    Ding, Mingjian
    Jiang, Chunsheng
    Li, Haiou
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (08) : 6266 - 6274
12345