Effect of in layer thickness on the photoelectric properties of indium tin oxide (ITO)/In/ITO multilayer films

被引：4

作者：

Jiao, Peiwen ^{[1
]}

Li, Sijin ^{[1
]}

Zhu, Guisheng ^{[1
]}

Xu, Huarui ^{[1
]}

Wang, Kunzhe ^{[1
]}

Zhao, Yunyun ^{[1
]}

Zhang, Xiuyun ^{[1
]}

Jiang, Kunpeng ^{[1
]}

Jiang, Xupeng ^{[1
]}

Huang, Yujia ^{[2
]}

机构：

[1] Guilin Univ Elect Technol, Engn Res Ctr Elect Informat Mat & Devices, Guangxi Key Lab Informat Mat, Minist Educ, Guilin 541004, Peoples R China

[2] Guangxi Zhongpei Optoelect Sci & Technol Co Ltd, Laibin 546100, Guangxi, Peoples R China

来源：

THIN SOLID FILMS | 2024年 / 789卷

基金：

中国国家自然科学基金;

关键词：

Indium tin oxide; Indium; Trilayer; Transmittance; Sheet resistance; Direct current magnetron sputtering; ELECTRICAL-PROPERTIES; THIN-FILMS; SOLAR-CELL; ITO FILMS; TRANSPARENT; AG; ELECTRODES; DEPOSITION; ANODES;

D O I：

10.1016/j.tsf.2023.140172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium Tin Oxide (ITO)/In/ITO films were fabricated using direct current magnetron sputtering technology to investigate the impact of the indium film on their photoelectric properties. The electrical performance analysis demonstrates a resistivity of 6.830 x 10-4 omega & sdot;cm and an average transmittance of the thin film of 89.5 % when the thickness of the indium layer is 12 nm. The ITO/In (12 nm)/ITO configuration exhibited the highest Figure of Merit of approximately 101.09 x 10-3 omega-1. ITO and In share a similar interface, which promotes carrier mobility without causing light reflection, thereby enhancing transmittance. Based on resistivity, carrier concentration, and mobility, it is evident that sputtering the In layer can enhance the electrical properties of the ITO film.

引用

页数：7

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