Emission and capture characteristics of electron trap (Eemi=0.8 eV) in Si-doped β-Ga2O3 epilayer

By deep level transient spectroscopy (DLTS), emission and capture behaviors have been explicitly investigated for a single electron trap in a Si-doped beta-Ga2O3 epilayer. Trap characteristics including activation energy for emission (E-emi = 0.8 eV), capture cross-section of 6.40 x 10(-15) cm(2) and lambda-corrected trap concentration (N-Ta) of 2.48 x 10(13) cm(-3) were revealed, together with non-emission region width (lambda = 267.78 nm). By isothermal DLTS, in addition to the impact of temperature, electric-field-enhanced trap emission kinetics were studied. When a relatively low electric field was applied (E <= 1.81 x 10(5) V cm(-1) at 330 K), emission kinetics of the trap was modeled to comply with phonon-assisted tunneling, whereas the emission process was regarded to be dominated by direct tunneling for a relatively high electric field (E >= 1.81 x 10(5) V cm(-1) at 330 K). A thermal-enhanced capture process has also been disclosed and quantitatively studied, where a capture barrier energy of 0.15 eV was extracted.