Maximizing Current Density in Monolithic Perovskite Silicon Tandem Solar Cells

被引:27
|
作者
Heydarian, Minasadat [1 ,2 ]
Messmer, Christoph [1 ,2 ]
Bett, Alexander J. [1 ]
Heydarian, Maryamsadat [1 ]
Chojniak, David [1 ]
Kabakli, Öezde S. [1 ]
Tutsch, Leonard [1 ]
Bivour, Martin [1 ]
Siefer, Gerald [1 ]
Schubert, Martin C. [1 ]
Goldschmidt, Jan Christoph [1 ,3 ]
Hermle, Martin [1 ]
Glunz, Stefan W. [1 ,2 ]
Schulze, Patricia S. C. [1 ]
机构
[1] Fraunhofer Inst Solar Energy Syst ISE, Heidenhofstr 2, D-79110 Freiburg, Germany
[2] Univ Freiburg, Dept Sustainable Syst Engn, Emmy Noether Str 2, D-79108 Freiburg, Germany
[3] Philipps Univ Marburg, Fac Phys, Biegenstr 10, D-35037 Marburg, Germany
关键词
bandgap tuning; current matching; perovskite silicon tandem solar cells; photovoltaics; spectrometric characterizations; PASSIVATION; EFFICIENCY; MISMATCH;
D O I
10.1002/solr.202200930
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Perovskite silicon tandem solar cells can overcome the efficiency limit of silicon single-junction solar cells. In two-terminal perovskite silicon tandem solar cells, current matching of subcells is an important requirement. Herein, a current-matched tandem solar cell using a planar front/ rear side-textured silicon heterojunction bottom solar cell with a p-i-n perovskite top solar cell that yields a high certified short-circuit current density of 19.6 mA cm(-2) is reported. Measures taken to improve the device are guided by optical simulation and a derived optical roadmap toward maximized tandem current density. To realize current matching of the two subcells, variation of the perovskite bandgap from approximate to 1.68 to 1.64 eV and thickness is investigated. Spectrometric characterization, in which current-voltage curves of tandem devices are recorded at systematically varied spectral irradiance conditions, is applied to determine the current matching point. In addition, remaining device limitations such as nonradiative recombination at the perovskite's interfaces are analyzed. Replacing the hole transport layer PTAA by 2PACz results in an overall certified power conversion efficiency of up to 26.8%. Precise simulation based on the device structure is essential as it provides efficient paths toward improving the device efficiency.
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页数:10
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