Photoelectrochemical Properties and Characterization of CdS/CdSe Heterojunctions Obtained by CBD on ITO and p-Si Substrates

This research investigates the optical, structural, electrical, and photoelectrochemical characteristics of CdS/CdSe heterojunctions formed on both ITO and p-Si substrates. The deposition of CdS and CdSe films was carried out using the chemical bath deposition method, which is economical and simple method. The optical, structural, and electrical properties of CdS/CdSe heterojunctions were analyzed through UV-Vis spectrometry, photoluminescence (PL) spectroscopy, field emission-scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman spectroscopy, and Hall-effect measurements. Furthermore, Mott-Schottky analysis was employed to investigate the electrochemical properties of the semiconductor CdS/CdSe heterojunctions on both ITO and p-Si substrates. Additionally, the photoelectrochemical investigations of CdS/CdSe heterojunctions on ITO and p-Si substrates were conducted by electrochemical analyses using linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS), and photocurrent - time plots under both dark and illuminated conditions.