A CMOS Wideband Watt-Level 4096-QAM Digital Power Amplifier Using Reconfigurable Power-Combining Transformer

被引:8
|
作者
Yang, Bingzheng [1 ]
Qian, Huizhen Jenny [1 ]
Wang, Tianyi [1 ]
Luo, Xun [1 ]
机构
[1] Univ Elect Sci & Technol China, Ctr Adv Semicond & Integrated Microsyst, Chengdu 611731, Peoples R China
基金
中国国家自然科学基金;
关键词
Inductors; Transformers; Computer architecture; Wideband; Power generation; Capacitors; Microprocessors; 4096-QAM; CMOS; digital power amplifier (DPA); dynamic range; harmonic suppression; reconfigurable transformer; tunable inductor; watt-level; wideband; LP CMOS; EFFICIENCY; DESIGN;
D O I
10.1109/JSSC.2022.3191975
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, a wideband watt-level digital power amplifier (DPA) with high efficiency and large dynamic range is presented in CMOS technology for wireless applications. To achieve high output power with enhanced operation bandwidth (BW), the wideband matching network based on a reconfigurable power-combining transformer is used. Meanwhile, the L-C circuit is used to suppress the harmonics, which further improves the output power of the fundamental signal. In addition, the LO leakage is suppressed by the 12-bit power digital-to-analog converter (power DAC), which leads to high dynamic range of the proposed DPA. To verify the mechanism, a 1.2-3.6-GHz watt-level 12-bit polar DPA is implemented and fabricated using a conventional 40-nm CMOS technology. With 1.1-/2.5-V supply, the fabricated DPA exhibits peak output power (P-out) of 32.67 dBm, peak drain efficiency (DE) of 45.1%, and peak power-added efficiency (PAE) of 35.5% at 2 GHz. It supports 50-MSyms/s 256-QAM with average output power (P-avg) of 22.76 dBm, error vector magnitude (EVM) of -31.46 dB, and adjacent channel leakage ratio (ACLR) of -30.67 dBc, 10-MSyms/s 1024-QAM with P-avg of 25.54 dBm, EVM of -38.2 dB, and ACLR of -38.71 dBc, and 5-MSym/s 4096-QAM with P-avg of 22.97 dBm, EVM of -43.0 dB, and ACLR of -46.32 dBc, respectively.
引用
收藏
页码:357 / 370
页数:14
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