Blue and Green Low Threshold Laser Diodes With InAlN Claddings

被引:3
|
作者
Malinverni, Marco [1 ]
Castiglia, Antonino [1 ]
Rossetti, Marco [1 ]
Ferhatovic, Adin [1 ]
Martin, Denis [1 ]
Duelk, Marcus [1 ]
Velez, Christian [1 ]
机构
[1] EXALOS AG, CH-8952 Schlieren, Switzerland
关键词
Optical reflection; Optical refraction; Lasers; Claddings; Wide band gap semiconductors; Optical waveguides; Aluminum gallium nitride; Blue lasers; green lasers; InAlGaN laser diode; low threshold; InAlN; AlInN; optical confinement; augmented reality; ALINN;
D O I
10.1109/LPT.2023.3321420
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on 300 mu m short cavity single transverse mode LDs employing n-type InAlN cladding layers. Threshold currents in the blue and green spectral range of 3.3 and 12.0 mA are demonstrated, respectively. This is accompanied by low electrical power consumption for optical powers in the mW range. Compared to conventional AlGaN-based devices having nominally identical active regions, an increase in modal gain is demonstrated, responsible for a approximate to 25% reduction in threshold currents. Fast-axis far field divergence angle measurements indicate that the modal gain improvement can be ascribed to a higher optical confinement factor when using InAlN.
引用
收藏
页码:1303 / 1306
页数:4
相关论文
共 50 条
  • [41] Development of highly efficient blue and green edge-emitting laser diodes
    Kishimoto, Katsuhiro
    Hirao, Tsuyoshi
    Morizumi, Tomonori
    Nagao, Yoji
    Nakatsu, Yoshitaka
    Yanamoto, Tomoya
    Nagahama, Shin-ichi
    GALLIUM NITRIDE MATERIALS AND DEVICES XIX, 2024, 12886
  • [42] Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold
    Li, X.
    Liu, Z. S.
    Zhao, D. G.
    Jiang, D. S.
    Chen, P.
    Zhu, J. J.
    Yang, J.
    Liu, W.
    He, X. G.
    Li, X. J.
    Liang, F.
    Liu, S. T.
    Xing, Y.
    Zhang, L. Q.
    Li, M.
    Zhang, J.
    APPLIED OPTICS, 2017, 56 (09) : 2462 - 2466
  • [43] LOW-THRESHOLD DYE-LASER PUMPED BY VISIBLE LASER-DIODES
    SCHEPS, R
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (10) : 1156 - 1158
  • [44] Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
    Yipeng Liang
    Jianping Liu
    Masao Ikeda
    Aiqin Tian
    Renlin Zhou
    Shuming Zhang
    Tong Liu
    Deyao Li
    Liqun Zhang
    Hui Yang
    Journal of Semiconductors, 2019, (05) : 67 - 70
  • [45] Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes
    Choi, Dae-Choul
    Kim, Yoon Seok
    Kim, Kyoung-Bo
    Lee, Sung-Nam
    PHOTONICS, 2024, 11 (02)
  • [46] Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
    Yipeng Liang
    Jianping Liu
    Masao Ikeda
    Aiqin Tian
    Renlin Zhou
    Shuming Zhang
    Tong Liu
    Deyao Li
    Liqun Zhang
    Hui Yang
    Journal of Semiconductors, 2019, 40 (05) : 67 - 70
  • [47] Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
    Liang, Yipeng
    Liu, Jianping
    Ikedaz, Masao
    Tian, Aiqin
    Zhou, Renlin
    Zhang, Shuming
    Liu, Tong
    Liz, Deyao
    Zhang, Liqun
    Yang, Hui
    JOURNAL OF SEMICONDUCTORS, 2019, 40 (05)
  • [48] Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region
    Tian, Aiqin
    Liu, Jianping
    Zhang, Liqun
    Li, Zengcheng
    Ikeda, Masao
    Zhang, Shuming
    Li, Deyao
    Wen, Pengyan
    Zhang, Feng
    Cheng, Yang
    Fan, Xiaowang
    Yang, Hui
    OPTICS EXPRESS, 2017, 25 (01): : 415 - 421
  • [49] Analysis of below-threshold efficiency characteristics of InGaN-based blue laser diodes
    Ryu, Han-Youl
    Choi, Won Jun
    Jeon, Ki-Seong
    Kang, Min-Goo
    Choi, Yunho
    Lee, Jeong-Soo
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)
  • [50] Present status of blue/green-emitting II-VI laser diodes
    Ishibashi, A
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 113 - 118