INFLUENCE OF ELECTRON IRRADIATION WITH E = 2 MeV ON ELECTROPHYSICAL AND OPTICAL CHARACTERISTICS OF GREEN InGaN/GaN LEDs

被引：0

作者：

Mosiuk, T. I. ^{[1
]}

Vernydub, R. M. ^{[1
]}

Lytovchenko, P. G. ^{[2
]}

Myroshnichenko, Yu. B. ^{[1
]}

Stratilat, D. P. ^{[2
]}

Tartachnyk, V. P. ^{[2
]}

Shlapatska, V. V. ^{[3
]}

机构：

[1] Natl Pedag DragoManov Univ, Kiev, Ukraine

[2] Natl Acad Sci Ukraine, Inst Nucl Res, Kiev, Ukraine

[3] Natl Acad Sci Ukraine, LV Pisarzhevski Phys Chem Inst, Kiev, Ukraine

来源：

NUCLEAR PHYSICS AND ATOMIC ENERGY | 2023年 / 24卷 / 01期

关键词：

InGaN; light emitting diode; negative differential resistance; current-voltage characteristics; electro-luminescence characteristics;

D O I：

10.15407/jnpae2023.01.027

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

We studied light-emitting diodes (LEDs) with quantum dots мade on basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 & DIVIDE; 300 K. On the current-voltage characteristics in the range of 77 & DIVIDE; 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.

引用

页码：27 / 33

页数：7

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