Tuning indirect-to-direct bandgap of lonsdaleite Si0.5Ge0.5 alloy via compressive strain for optical gain

被引:0
|
作者
Mayengbam, Rishikanta [1 ]
Das, Subhasis [1 ]
Tan, Chuan Seng [1 ]
Fan, Weijun [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
关键词
Density Functional Theory; SiGe; Bandgap; Absorption;
D O I
10.1109/EDTM55494.2023.10103070
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents theoretical insights on the electronic bandstructure and optical absorption of lonsdaleite Si0.5Ge0.5 alloy under uniaxial compressive strain. Within the framework of density functional theory (DFT), the electronic and absorption characteristics were calculated by modified Becke-Johnson (mBJ) potential with consideration of spin-orbit coupling (SOC). An indirect-to-direct transition of band gap along with a boost in absorption coefficient is observed in strained alloys, which can be promising for SWIR and mid-IR photonic applications. Optical gain was calculated to demonstrate the applicability of such materials in photonic devices.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
    Yu, W.
    Zhang, B.
    Zhao, Q. T.
    Hartmann, J. -M.
    Buca, D.
    Nichau, A.
    Luptak, R.
    Lopes, J. M. J.
    Lenk, S.
    Luysberg, M.
    Bourdelle, K. K.
    Wang, X.
    Mantl, S.
    SOLID-STATE ELECTRONICS, 2011, 62 (01) : 185 - 188
  • [42] Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908
    Zhao, L
    Zuo, YH
    Shi, WH
    Wang, QM
    Chen, YH
    Wang, HN
    APPLIED PHYSICS LETTERS, 2006, 88 (07)
  • [43] Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content
    Ryu, Mee-Yi
    Harris, Tom R.
    Yeo, Y. K.
    Beeler, R. T.
    Kouvetakis, J.
    APPLIED PHYSICS LETTERS, 2013, 102 (17)
  • [44] A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown
    Zhao, Zhiqian
    Li, Yongliang
    Wang, Guilei
    Du, Anyan
    Gu, Shihai
    Li, Yan
    Zhang, Qingzhu
    Xu, Gaobo
    Ma, Xueli
    Wang, Xiaolei
    Yang, Hong
    Luo, Jun
    Li, JunFeng
    Yin, Huaxiang
    Wang, Wenwu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (15) : 14130 - 14135
  • [45] A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown
    Zhiqian Zhao
    Yongliang Li
    Guilei Wang
    Anyan Du
    Shihai Gu
    Yan Li
    Qingzhu Zhang
    Gaobo Xu
    Xueli Ma
    Xiaolei Wang
    Hong Yang
    Jun Luo
    JunFeng Li
    Huaxiang Yin
    Wenwu Wang
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 14130 - 14135
  • [46] Si0.5Ge0.5 relaxed buffer photodetectors and low-loss polycrystalline silicon waveguides for integrated optical interconnects at lambda=1.3 mu m
    Giovane, LM
    Liao, L
    Lim, DR
    Agarwal, AM
    Fitzgerald, EA
    Kimerling, LC
    SILICON-BASED MONOLITHIC AND HYBRID OPTOELECTRONIC DEVICES, 1997, 3007 : 74 - 80
  • [47] A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping
    Yan Li
    Huaizhi Luo
    Anlan Chen
    Xiaotong Mao
    Fei Zhao
    Jun Luo
    Yongliang Li
    Journal of Materials Science: Materials in Electronics, 2024, 35
  • [48] A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping
    Li, Yan
    Luo, Huaizhi
    Chen, Anlan
    Mao, Xiaotong
    Zhao, Fei
    Luo, Jun
    Li, Yongliang
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (06)
  • [49] High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer
    Zhao, Zhiqian
    Li, Yongliang
    Gu, Shihai
    Zhang, Qingzhu
    Wang, Guilei
    Li, Junjie
    Li, Yan
    Xu, Gaobo
    Ma, Xueli
    Wang, Xiaolei
    Yang, Hong
    Lu, Jun
    Li, JunFeng
    Yin, Huaxiang
    Wang, Wenwu
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 99 : 159 - 164
  • [50] Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization
    Park, Sang Wook
    Choi, Jong Youn
    Siddiqui, Shariq
    Sahu, Bhagawan
    Galatage, Rohit
    Yoshida, Naomi
    Kachian, Jessica
    Kummel, Andrew C.
    JOURNAL OF CHEMICAL PHYSICS, 2017, 146 (05):