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- [41] High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gateSOLID-STATE ELECTRONICS, 2011, 62 (01) : 185 - 188Yu, W.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyZhang, B.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyZhao, Q. T.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyHartmann, J. -M.论文数: 0 引用数: 0 h-index: 0机构: MINATEC, CEA LETI, F-38054 Grenoble, France Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyBuca, D.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyNichau, A.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyLuptak, R.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyLopes, J. M. J.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyLenk, S.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyLuysberg, M.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, Peter Grunberg Inst 5, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyBourdelle, K. K.论文数: 0 引用数: 0 h-index: 0机构: SOITEC, F-38190 Bernin, France Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyWang, X.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China Forschungszentrum Julich, PGI IT 9, D-52425 Julich, GermanyMantl, S.论文数: 0 引用数: 0 h-index: 0机构: Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany Forschungszentrum Julich, JARA Fundamentals Future Intormat Technol, D-52425 Julich, Germany Forschungszentrum Julich, PGI IT 9, D-52425 Julich, Germany
- [42] Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908APPLIED PHYSICS LETTERS, 2006, 88 (07)Zhao, L论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaZuo, YH论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaShi, WH论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaWang, QM论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaChen, YH论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaWang, HN论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
- [43] Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn contentAPPLIED PHYSICS LETTERS, 2013, 102 (17)论文数: 引用数: h-index:机构:Harris, Tom R.论文数: 0 引用数: 0 h-index: 0机构: USAF, Inst Technol, Dept Engn Phys, Wright Patterson AFB, OH 45433 USA Kangwon Natl Univ, Dept Phys, Kangwon 200701, South KoreaYeo, Y. K.论文数: 0 引用数: 0 h-index: 0机构: USAF, Inst Technol, Dept Engn Phys, Wright Patterson AFB, OH 45433 USA Kangwon Natl Univ, Dept Phys, Kangwon 200701, South KoreaBeeler, R. T.论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA Kangwon Natl Univ, Dept Phys, Kangwon 200701, South KoreaKouvetakis, J.论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA Kangwon Natl Univ, Dept Phys, Kangwon 200701, South Korea
- [44] A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grownJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (15) : 14130 - 14135Zhao, Zhiqian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China UCAS, Beijing 100049, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaLi, Yongliang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaWang, Guilei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaDu, Anyan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaGu, Shihai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaLi, Yan论文数: 0 引用数: 0 h-index: 0机构: Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaZhang, Qingzhu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaXu, Gaobo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaMa, Xueli论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaWang, Xiaolei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaYang, Hong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaLuo, Jun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaLi, JunFeng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaYin, Huaxiang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaWang, Wenwu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China
- [45] A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grownJournal of Materials Science: Materials in Electronics, 2019, 30 : 14130 - 14135Zhiqian Zhao论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsYongliang Li论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsGuilei Wang论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsAnyan Du论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsShihai Gu论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsYan Li论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsQingzhu Zhang论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsGaobo Xu论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsXueli Ma论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsXiaolei Wang论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsHong Yang论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsJun Luo论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsJunFeng Li论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsHuaxiang Yin论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of MicroelectronicsWenwu Wang论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Science,Integrated Circuit Advanced Process Center, Institute of Microelectronics
- [46] Si0.5Ge0.5 relaxed buffer photodetectors and low-loss polycrystalline silicon waveguides for integrated optical interconnects at lambda=1.3 mu mSILICON-BASED MONOLITHIC AND HYBRID OPTOELECTRONIC DEVICES, 1997, 3007 : 74 - 80Giovane, LM论文数: 0 引用数: 0 h-index: 0Liao, L论文数: 0 引用数: 0 h-index: 0Lim, DR论文数: 0 引用数: 0 h-index: 0Agarwal, AM论文数: 0 引用数: 0 h-index: 0Fitzgerald, EA论文数: 0 引用数: 0 h-index: 0Kimerling, LC论文数: 0 引用数: 0 h-index: 0
- [47] A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus dopingJournal of Materials Science: Materials in Electronics, 2024, 35Yan Li论文数: 0 引用数: 0 h-index: 0机构: Beijing Information Science and Technology University,School of Applied ScienceHuaizhi Luo论文数: 0 引用数: 0 h-index: 0机构: Beijing Information Science and Technology University,School of Applied ScienceAnlan Chen论文数: 0 引用数: 0 h-index: 0机构: Beijing Information Science and Technology University,School of Applied ScienceXiaotong Mao论文数: 0 引用数: 0 h-index: 0机构: Beijing Information Science and Technology University,School of Applied ScienceFei Zhao论文数: 0 引用数: 0 h-index: 0机构: Beijing Information Science and Technology University,School of Applied ScienceJun Luo论文数: 0 引用数: 0 h-index: 0机构: Beijing Information Science and Technology University,School of Applied ScienceYongliang Li论文数: 0 引用数: 0 h-index: 0机构: Beijing Information Science and Technology University,School of Applied Science
- [48] A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus dopingJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (06)Li, Yan论文数: 0 引用数: 0 h-index: 0机构: Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R China Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R ChinaLuo, Huaizhi论文数: 0 引用数: 0 h-index: 0机构: Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R China Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R ChinaChen, Anlan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R ChinaMao, Xiaotong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R ChinaZhao, Fei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R ChinaLuo, Jun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R ChinaLi, Yongliang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R China
- [49] High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed bufferMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 99 : 159 - 164Zhao, Zhiqian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China UCAS, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaLi, Yongliang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaGu, Shihai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaZhang, Qingzhu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaWang, Guilei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaLi, Junjie论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China UCAS, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaLi, Yan论文数: 0 引用数: 0 h-index: 0机构: Beijing Informat Sci & Technol Univ, Sch Appl Sci, Beijing 100192, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaXu, Gaobo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaMa, Xueli论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaWang, Xiaolei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaYang, Hong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaLu, Jun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaLi, JunFeng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaYin, Huaxiang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R ChinaWang, Wenwu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China
- [50] Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalizationJOURNAL OF CHEMICAL PHYSICS, 2017, 146 (05):Park, Sang Wook论文数: 0 引用数: 0 h-index: 0机构: Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USAChoi, Jong Youn论文数: 0 引用数: 0 h-index: 0机构: Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USASiddiqui, Shariq论文数: 0 引用数: 0 h-index: 0机构: GlobalFoundries USA Inc, TD Res, 257 Fuller Rd, Albany, NY 12203 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USASahu, Bhagawan论文数: 0 引用数: 0 h-index: 0机构: GlobalFoundries USA Inc, TD Res, 257 Fuller Rd, Albany, NY 12203 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USAGalatage, Rohit论文数: 0 引用数: 0 h-index: 0机构: GlobalFoundries USA Inc, TD Res, 257 Fuller Rd, Albany, NY 12203 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USAYoshida, Naomi论文数: 0 引用数: 0 h-index: 0机构: Appl Mat Inc, Santa Clara, CA 95054 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USAKachian, Jessica论文数: 0 引用数: 0 h-index: 0机构: Appl Mat Inc, Santa Clara, CA 95054 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USAKummel, Andrew C.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA Univ Calif San Diego, Dept Chem & Biochem, La Jolla, CA 92093 USA Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA