Tuning indirect-to-direct bandgap of lonsdaleite Si0.5Ge0.5 alloy via compressive strain for optical gain

被引:0
|
作者
Mayengbam, Rishikanta [1 ]
Das, Subhasis [1 ]
Tan, Chuan Seng [1 ]
Fan, Weijun [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
关键词
Density Functional Theory; SiGe; Bandgap; Absorption;
D O I
10.1109/EDTM55494.2023.10103070
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents theoretical insights on the electronic bandstructure and optical absorption of lonsdaleite Si0.5Ge0.5 alloy under uniaxial compressive strain. Within the framework of density functional theory (DFT), the electronic and absorption characteristics were calculated by modified Becke-Johnson (mBJ) potential with consideration of spin-orbit coupling (SOC). An indirect-to-direct transition of band gap along with a boost in absorption coefficient is observed in strained alloys, which can be promising for SWIR and mid-IR photonic applications. Optical gain was calculated to demonstrate the applicability of such materials in photonic devices.
引用
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页数:3
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