GaN Vertical Transistors with Staircase Channels for High-Voltage Applications

被引：0
|
作者：
Barman, Kuntal [1 ]
Lin, Dai-Jie [1 ]
Gupta, Rohit [1 ]
Chang, Chih-Kang [1 ]
Huang, Jian-Jang [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
MATERIALS | 2023年 / 16卷 / 02期
关键词：
vertical transistor; vertical GaN transistor; high power transistor; GaN-based high power transistor; staircase channel GaN transistor; GaN on GaN technology; IMPACT IONIZATION; HEMTS;
D O I：
10.3390/ma16020582
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance through the gate-dielectric-semiconductor interface, which results in a high breakdown voltage of 1.52 kV and maintains a channel on-resistance of 2.61 m omega center dot cm(2). Because of the variable length and doping profile in the channel region, this model offers greater flexibility to meet a wide range of device application requirements.
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页数：10
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