Effect of Ar Plasma Treatment on the Interface and Performance of CdZnTe Detectors

被引：0
|
作者：
Cao, Xiangzhi [1 ]
Zhang, Jijun [1 ]
Wang, Shulei [1 ]
Xu, Zheren [1 ]
Wang, Linjun [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2023年 / 58卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Ar plasma; CdZnTe detectors; interfaces; surface treatment; CONTACTS; CDTE;
D O I：
10.1002/crat.202200177
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The performance of CdZnTe detectors is not only influenced by the growth of crystal, but also by the quality of the interface layer between the crystal and the electrode. A model of CdZnTe detector with metal-semiconductor-metal structure is developed to investigate the effects of the interface on the space charge and electric field distribution. Atomic force microscopy, current-voltage (I-V) analysis, and energy spectra under Am-241 irradiation are adopted to investigate the effects of argon (Ar) plasma treatment on the interface and performance of CdZnTe detectors experimentally. The simulation results show that the interface layer with low density of surface state and thin thickness can form a more uniform space charge and electric field distribution. Due to the decrease of voltage drop across the interface, the leakage current at 200 V of CdZnTe detector with Ar plasma treatment is reduced from 159 to 44 nA cm(-2), and the full-width at half-maximum under Am-241 is improved from 9.3% to 8.2%, as compared to conventional Br-MeOH treatment.
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页数：7
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