Modeling optical second harmonic generation for oxide/semiconductor interface characterization

被引：3
|
作者：
Mallick, Binit [1 ]
Saha, Dipankar [1 ]
Datta, Anindya [2 ]
Ganguly, Swaroop [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Chem, Mumbai 400076, Maharashtra, India
来源：
SOLID-STATE ELECTRONICS | 2023年 / 199卷
关键词：
Contactless; Non-destructive; Oxide; semiconductor interface; characterization; Interface charge density; Optical second harmonic generation; Numerical modeling; Poisson-Boltzmann; Time dependent;
D O I：
10.1016/j.sse.2022.108502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we present physics-based numerical modeling of experimental time-dependent optical second harmonic generation data from an oxide/semiconductor (SiO2/Si) interface. A comprehensive numerical solution to the Poisson-Boltzmann equation has been developed here, using the Newton-Raphson method at different time instances. It incorporates the trapping behavior of photo-excited charge carriers at the silicon dioxide/silicon (SiO2/Si) interface, within the silicon dioxide (SiO2) and at the SiO2 surface, in order to model the second harmonic photon count data obtained from our in-house experimental setup. This yields a quantitative analysis of the SiO2/Si interface, oxide, and surface charge densities, and provides a contact-less and non-invasive optical technique for oxide/semiconductor interface characterization.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Non-destructive Characterization of Dielectric - Semiconductor Interfaces by Second Harmonic Generation
    Ionica, I.
    Damianos, D.
    Kaminski, A.
    Vitrant, G.
    Blanc-Pelissier, D.
    Changala, J.
    Kryger, M.
    Barbos, C.
    Cristoloveanu, S.
    DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2016, 72 (02): : 139 - 151
  • [22] Second harmonic generation in mesoscale semiconductor helices
    Law, Didier
    Kim, Ji-Young
    Kotov, Nicholas
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2019, 258
  • [23] Relative bulk and interface contributions to optical second-harmonic generation in silicon
    Peng, HJ
    Adles, EJ
    Wang, JFT
    Aspnes, DE
    PHYSICAL REVIEW B, 2005, 72 (20):
  • [24] Optical second harmonic spectroscopy of the Ge-oxide/Ge(111) interface
    Ohashi, H
    Sano, H
    Mizutani, G
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (12): : 6972 - 6975
  • [25] Optical second harmonic spectroscopy of the Ge-oxide/Ge(111) interface
    Ohashi, Hiroaki
    Sano, Haruyuki
    Mizutani, Goro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (12): : 6972 - 6975
  • [26] Separation of bulk and interface contributions by optical second harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure
    Dadap, J.I.
    Hu, X.F.
    Anderson, M.H.
    Downer, M.C.
    Lowell, J.K.
    Aktsipetrov, O.A.
    Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 1996, 9 : 133 - 134
  • [27] Interface resonances in optical second-harmonic generation from oxide-covered Ge(111) and Ge(100)
    Rafaelsen, Jens
    Kristensen, Peter K.
    Pedersen, Kjeld
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2013, 30 (10) : 2758 - 2764
  • [28] INTRACAVITY GENERATION OF SECOND OPTICAL HARMONIC
    VOLOSOV, VD
    KARPENKO, SG
    KORNIENKO, NE
    KRYLOV, VN
    MANKO, AA
    STRIZHEVSKII, VL
    KVANTOVAYA ELEKTRONIKA, 1975, 2 (05): : 919 - 929
  • [29] GENERATION OF SECOND OPTICAL HARMONIC IN GASE
    MERCIER, A
    LEVY, F
    HELVETICA PHYSICA ACTA, 1972, 45 (06): : 872 - 874
  • [30] Second harmonic generation in optical fibers
    Poumellec, Bertrand, 1600, (44): : 3 - 4
12345