Modeling optical second harmonic generation for oxide/semiconductor interface characterization

被引：3
|
作者：
Mallick, Binit [1 ]
Saha, Dipankar [1 ]
Datta, Anindya [2 ]
Ganguly, Swaroop [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Chem, Mumbai 400076, Maharashtra, India
来源：
SOLID-STATE ELECTRONICS | 2023年 / 199卷
关键词：
Contactless; Non-destructive; Oxide; semiconductor interface; characterization; Interface charge density; Optical second harmonic generation; Numerical modeling; Poisson-Boltzmann; Time dependent;
D O I：
10.1016/j.sse.2022.108502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we present physics-based numerical modeling of experimental time-dependent optical second harmonic generation data from an oxide/semiconductor (SiO2/Si) interface. A comprehensive numerical solution to the Poisson-Boltzmann equation has been developed here, using the Newton-Raphson method at different time instances. It incorporates the trapping behavior of photo-excited charge carriers at the silicon dioxide/silicon (SiO2/Si) interface, within the silicon dioxide (SiO2) and at the SiO2 surface, in order to model the second harmonic photon count data obtained from our in-house experimental setup. This yields a quantitative analysis of the SiO2/Si interface, oxide, and surface charge densities, and provides a contact-less and non-invasive optical technique for oxide/semiconductor interface characterization.
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页数：5
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