The influence of interface on the dielectric and tunable properties of BCZT/BZT ceramic

被引:2
|
作者
Yang, Pan [1 ]
Zhao, Le [1 ]
Shi, Shuai [1 ]
Zheng, Haoran [2 ,3 ]
Yu, Shihui [1 ]
机构
[1] Luoyang Inst Sci & Technol, Dept Elect Engn & Automat, Luoyang 471023, Henan, Peoples R China
[2] Guangdong Commun Polytech, Sch Comp Engn, Guangzhou 510000, Guangdong, Peoples R China
[3] Dongguan Univ Technol, Int Sch Microelect, Dongguan 523808, Peoples R China
基金
中国国家自然科学基金;
关键词
PHASE-TRANSITION; ENERGY-STORAGE; MICROWAVE TUNABILITY; CRYSTAL-STRUCTURE; TEMPERATURE; PERMITTIVITY; PERFORMANCE; BEHAVIOR;
D O I
10.1007/s10854-024-12218-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bilayer structure may be a good and convenient strategy to enhance the tunable properties of ceramics, while it has been investigated rarely. In this work, BCZT, BCZT/BZT and BZT ceramics are prepared via solid-state sintering to investigated the influence of interface on the dielectric and tunable properties. An undeteriorated tunability (43%) and reduced loss tangent (0.0031) are achieved in BCZT/BZT ceramic. Shannon additive rule and series equivalent circuit model are used to understand the undeteriorated tunability. Current density-electric field hysteresis loops and insulation resistance confirm that the lower loss tangent achieved in BCZT/BZT ceramic results from the interrupted moving paths of carriers at interface. Due to the reduced loss tangent and undeteriorated tunability, the FOM of BCZT/BZT ceramic (138) is higher than that of BCZT (69) and BZT (97) ceramics. The results make BCZT/BZT ceramic have a great application potential in tunable microwave devices.
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页数:10
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