Low-Cost Antimony Selenosulfide with Tunable Bandgap for Highly Efficient Solar Cells

被引:19
|
作者
Dong, Jiabin [1 ]
Liu, Huizhen [1 ]
Cao, Zixiu [1 ]
Liu, Yue [1 ]
Bai, Yuxing [2 ]
Chen, Mohan [1 ]
Liu, Bei [1 ]
Wu, Li [2 ]
Luo, Jingshan [1 ]
Zhang, Yi [1 ]
Liu, Shengzhong [3 ]
机构
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Engn Res Ctr Thin Film Optoelect Technol, Tianjin Key Lab Thin Film Devices & Technol,Minist, Tianjin 300350, Peoples R China
[2] Nankai Univ, Sch Phys, Key Lab Weak Light Nonlinear Photon, Minist Educ, Tianjin 300071, Peoples R China
[3] Shaanxi Normal Univ, Natl Minist Educ Inst Adv Energy Mat, Sch Mat Sci & Engn, Key Lab Appl Surface & Colloid Chem, Xian 710119, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
antimony selenosulfide; ideal bandgap; low-cost; sodium selenosulfate; solar cells;
D O I
10.1002/smll.202206175
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
About 10% efficient antimony selenosulfide (Sb-2(S,Se)(3)) solar cell is realized by using selenourea as a hydrothermal raw material to prepare absorber layers. However, tailoring the bandgap of hydrothermal-based Sb-2(S,Se)(3) film to the ideal bandgap (1.3-1.4 eV) using the selenourea for optimal efficiency is still a challenge. Moreover, the expensive selenourea dramatically increases the fabricating cost. Here, a straightforward one-step hydrothermal method is developed to prepare high-quality Sb-2(S,Se)(3) films using a novel precursor sodium selenosulfate as the selenium source. By tuning the Se/(Se+S) ratio in the hydrothermal precursor solution, a series of high-quality Sb-2(S,Se)(3) films with reduced density of deep defect states and tunable bandgap from 1.31 to 1.71 eV is successfully prepared. Consequently, the best efficiency of 10.05% with a high current density of 26.01 mA cm(-2) is achieved in 1.35 eV Sb-2(S,Se)(3) solar cells. Compared with the traditional method using selenourea, the production cost for the Sb-2(S,Se)(3) devices is reduced by over 80%. In addition, the device exhibits outstanding stability, maintaining more than 93% of the initial power conversion efficiency after 30 days of exposure in the atmosphere without encapsulation. The present work definitely paves a facile and effective way to develop low-cost and high-efficiency chalcogenide-based photovoltaic devices.
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页数:8
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