FSPDA: A Full Sequence Program Data Allocation Scheme for Boosting 3-D nand Flash Read Performance

被引:0
|
作者
Pang, Shujie [1 ]
Deng, Yuhui [1 ]
Wu, Zhaorui [1 ]
Zhang, Genxiong [1 ]
Li, Jie [1 ]
Qin, Xiao [2 ]
机构
[1] Jinan Univ, Dept Comp Sci, Guangzhou 510632, Peoples R China
[2] Auburn Univ, Dept Comp Sci & Software Engn, Auburn, AL 36830 USA
基金
中国国家自然科学基金;
关键词
3-D NAND flash; data allocation; full sequence program (FSP); multiplane operation; MANAGEMENT;
D O I
10.1109/TCAD.2023.3294452
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Multibit 3-D NAND flash-based solid-state disks (SSDs), offering high storage density, contain multiple types of pages to accommodate multiple bits per physical cell. Full sequence program or FSP can program multiple pages in a word line at a time, thereby improving write throughput. Unfortunately, large-grained FSP operations coarsely aggregate consecutive logical pages on the same word line, which adversely affects the parallelism and latency of read requests. Moreover, FSP smooths the program latencies for different types of pages, whereas the pages still exhibit various read latencies. Multiple read latencies and lower read parallelism noticeably deteriorate the completion efficiency of read requests: SSD performance is degraded. To address this issue, we propose an FSP data allocation scheme called FSPDA that incorporates the physical structure characteristics of multibit 3-D NAND, aiming to bolster the read performance of 3-D NAND Flash-based SSDs. FSPDA embraces two distinctive and vital features. First, according to the distance between logical pages, FSPDA allocates logical pages to specified parallel units and stipulates that consecutive logical pages must be assigned to different planes, thus improving read parallelism and data locality. Second, to further reduce read latency, FSPDA employs cache hits to determine hot and cold data to be placed to low-latency and high-latency pages, respectively. We compare FSPDA with two state-of-the-art schemes-OSPADA and single-operation-multiple-location-in terms of multiplane read (MPR) counts, read response time, and GC counts under eight real-world workloads. The experimental results show that compared with the existing schemes, FSPDA slashes the number of MPR counts, read response time, and the number of GC counts by an average of 34.4%, 28.5%, and 13.6%, respectively.
引用
收藏
页码:4336 / 4349
页数:14
相关论文
共 50 条
  • [31] An Efficient Dynamic Threshold Voltage Detection Scheme for Improving 3-D NAND Flash Reliability
    Yin, Linxin
    Li, Yingzhao
    Zhang, Xiaoyi
    Zhai, Xiongfei
    Han, Guojun
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 24 (04) : 529 - 543
  • [32] Adaptive Pulse Programming Scheme for Improving the Vth Distribution and Program Performance in 3D NAND Flash Memory
    Du, Zhichao
    Li, Shuang
    Wang, Yu
    Fu, Xiang
    Liu, Fei
    Wang, Qi
    Huo, Zongliang
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 102 - 107
  • [33] Data-Aware 3-D TLC NAND Flash Memory Reliability Optimization
    Salamin, Sami
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (10) : 5962 - 5974
  • [34] ApproxFTL: On the Performance and Lifetime Improvement of 3-D NAND Flash-Based SSDs
    Cui, Jinhua
    Zhang, Youtao
    Shi, Liang
    Xue, Chun Jason
    Wu, Weiguo
    Yang, Jun
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2018, 37 (10) : 1957 - 1970
  • [35] A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
    Du, Zhichao
    Dong, Zhipeng
    You, Kaikai
    Jia, Xinlei
    Tian, Ye
    Wang, Yu
    Yang, Zhaochun
    Fu, Xiang
    Liu, Fei
    Wang, Qi
    Jin, Lei
    Huo, Zongliang
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022, 10 : 98 - 103
  • [36] Adaptive Pulse Program Scheme to Improve the Vth Distribution for 3D NAND Flash
    Li, Shuang
    Du, Zhichao
    Wang, Yu
    Liu, Fei
    Wang, Qi
    Huo, Zongliang
    2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
  • [37] Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping
    Gupta, Deepika
    Upadhyay, Abhishek Kumar
    Beohar, Ankur
    Vishvakarma, Santosh Kumar
    Memories - Materials, Devices, Circuits and Systems, 2023, 4
  • [38] Investigation and Compact Modeling of Hot-Carrier Injection for Read Disturbance in 3-D NAND Flash Memory
    Chen, Hong-Chih
    Chen, Jian-Jie
    Tu, Yu-Fa
    Zhou, Kuan-Ju
    Kuo, Chuan-Wei
    Su, Wan-Ching
    Hung, Yang-Hao
    Shih, Yu-Shan
    Huang, Hui-Chun
    Tsai, Tsung-Ming
    Huang, Jen-Wei
    Lai, Wei-Chih
    Chang, Ting-Chang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (07) : 2807 - 2811
  • [39] Lightweight Read Reference Voltage Calibration Strategy for Improving 3-D TLC NAND Flash Memory Reliability
    Feng, Hua
    Wei, Debao
    Wang, Yongchao
    Song, Yu
    Piao, Zhelong
    Qiao, Liyan
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2023, 23 (03) : 370 - 379
  • [40] Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory
    Kim, Donghwi
    Yoon, Gilsang
    Go, Donghyun
    Park, Jounghun
    Kim, Jungsik
    Lee, Jeong-Soo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) : 4644 - 4648