Terahertz Plasmon Polaritons in Large Area Bi2Se3 Topological Insulators

被引:2
|
作者
Pistore, Valentino [1 ,2 ]
Viti, Leonardo [1 ,2 ]
Schiattarella, Chiara [1 ,2 ,3 ]
Riccardi, Elisa [1 ,2 ]
Knox, Craig S.
Yagmur, Ahmet [4 ]
Burton, Joel J. [4 ]
Sasaki, Satoshi [4 ]
Davies, A. Giles [3 ]
Linfield, Edmund H. [3 ]
Freeman, Joshua R. [3 ]
Vitiello, Miriam S. [1 ,2 ]
机构
[1] CNR Ist Nanosci, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[2] Scuola Normale Super Pisa, Piazza San Silvestro 12, I-56127 Pisa, Italy
[3] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, England
[4] Univ Leeds, Sch Phys & Astron, Leeds LS2 9JT, England
基金
欧洲研究理事会; 英国工程与自然科学研究理事会;
关键词
Bismuth Selenide; near-field nanoscopy; terahertz; quantum cascade lasers; SINGLE-CRYSTALS; SURFACE-STATES; BISMUTH; TRANSPORT; BI2TE3; SB2TE3; SPECTROSCOPY; GROWTH; RAMAN;
D O I
10.1002/adom.202301673
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Assessing the nature of topological quantum materials, and in particular probing the existence of topological surface states, is a very challenging task. Terahertz (THz) frequency scattering near-field optical microscopy has emerged as an effective technique to investigate the presence of massless surface carriers by locally probing collective surface excitations, i.e., plasmon polaritons, whose dispersion critically depends on the density and nature of surface carriers. Here, thin (14-19 nm) films of Bi2Se3 are experimentally investigated through a combination of x-ray diffraction, Hall-bar magneto-transport, and near-field detectorless optical holography at THz frequencies, from 2 to 4.3 THz. The dispersion of surface plasmon polaritons are determined for different Bi2Se3 film thicknesses, proving the presence of massless surface carriers. The results open intriguing opportunities in THz nano-plasmonics and topological nano-photonics including the development of superlenses and metasurfaces, making use of plasmon polaritons.
引用
收藏
页数:9
相关论文
共 50 条
  • [31] Large magnetoresistance in high mobility topological insulator Bi2Se3
    Yan, Yuan
    Wang, Li-Xian
    Yu, Da-Peng
    Liao, Zhi-Min
    APPLIED PHYSICS LETTERS, 2013, 103 (03)
  • [32] Topological Insulators Bi2Te3 and Bi2Se3 Grown by MBE on (001) GaAs Substrates
    Liu, X.
    Smith, D. J.
    Fan, J.
    Zhang, Y. -H.
    Cao, H.
    Chen, Y. P.
    Kirby, B. J.
    Sun, N.
    Ruggiero, S. T.
    Leiner, J.
    Pimpinella, R. E.
    Hagmann, J.
    Tivakornsasithorn, K.
    Dobrowolska, M.
    Furdyna, J. K.
    15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15), 2011, 1416 : 105 - 108
  • [33] Exploring the nontrivial band edge in the bulk of the topological insulators Bi2Se3 and Bi2Te3
    Guehne, Robin
    Chlan, Vojtech
    PHYSICAL REVIEW RESEARCH, 2024, 6 (01):
  • [34] Surface plasmon polaritons in topological insulators
    Qi, Junjie
    Liu, Haiwen
    Xie, X. C.
    PHYSICAL REVIEW B, 2014, 89 (15)
  • [35] In-plane plasmon coupling in topological insulator Bi2Se3 thin films
    Nasir, Saadia
    Wang, Zhengtianye
    Mambakkam, Sivakumar, V
    Law, Stephanie
    APPLIED PHYSICS LETTERS, 2021, 119 (20)
  • [36] Heterostructures of Graphene and Topological Insulators Bi2Se3, Bi2Te3, and Sb2Te3
    Zollner, Klaus
    Fabian, Jaroslav
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (01):
  • [37] Terahertz-driven hot Dirac fermion and plasmon dynamics in the bulk-insulating topological insulator Bi2Se3
    Lee, Bumjoo
    In, Chihun
    Moon, Jisoo
    Kim, Tae Hoon
    Oh, Seongshik
    Noh, Tae Won
    Choi, Hyunyong
    PHYSICAL REVIEW B, 2022, 105 (04)
  • [38] Temperature dependent Raman scattering studies of three dimensional topological insulators Bi2Se3
    Irfan, Bushra
    Sahoo, Satyaprakash
    Gaur, Anand P. S.
    Ahmadi, Majid
    Guinel, Maxime J. -F.
    Katiyar, Ram S.
    Chatterjee, Ratnamala
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [39] Surface and substrate induced effects on thin films of the topological insulators Bi2Se3 and Bi2Te3
    Liu, Wenliang
    Peng, Xiangyang
    Wei, Xiaolin
    Yang, Hong
    Stocks, G. Malcolm
    Zhong, Jianxin
    PHYSICAL REVIEW B, 2013, 87 (20)
  • [40] Tight-binding theory of NMR shifts in topological insulators Bi2Se3 and Bi2Te3
    Boutin, Samuel
    Ramirez-Ruiz, Jorge
    Garate, Ion
    PHYSICAL REVIEW B, 2016, 94 (11)