The design of vertical and lateral PIN Ge-on-Si photodetectors was motivated by the disparity in electron and hole mobilities. In the case of vertical PIN junction detectors, configuring the slab region as n-type doping leads to a notable increase in the bandwidth of approximately 20 GHz compared to utilizing p-type doping for the slab. For lateral PIN junction detectors, we determined that setting the length of the n-type slab region to be 2.8 times that of the p-type slab region, based on the carrier saturation drift rate ratio, does not compromise the bandwidth. This configuration enhances the bandwidth while minimizing light absorption loss from the electrode. The proposed design in this study enhances the performance of Ge-on-Si photodetectors without adding complexity to the fabrication process. The principles applied in this study serve as instructive references for the conceptualization of other photonic or electronic devices, reinforcing the widespread applicability of these design strategies.
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Roma Tre Univ, Dept Ind Elect & Mech Engn, Via Vito Volterra 62, I-00146 Rome, ItalyRoma Tre Univ, Dept Ind Elect & Mech Engn, Via Vito Volterra 62, I-00146 Rome, Italy
Manakkakudy Kumaran, Anju
De Iacovo, Andrea
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Roma Tre Univ, Dept Ind Elect & Mech Engn, Via Vito Volterra 62, I-00146 Rome, ItalyRoma Tre Univ, Dept Ind Elect & Mech Engn, Via Vito Volterra 62, I-00146 Rome, Italy
De Iacovo, Andrea
Ballabio, Andrea
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Eye4NIR Srl, Via Bartolomeo Colleoni 14, I-23801 Calolziocorte, ItalyRoma Tre Univ, Dept Ind Elect & Mech Engn, Via Vito Volterra 62, I-00146 Rome, Italy
Ballabio, Andrea
Frigerio, Jacopo
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Politecn Milan, Dipartimento Fis, LNESS, Via Anzani 42, I-22100 Como, ItalyRoma Tre Univ, Dept Ind Elect & Mech Engn, Via Vito Volterra 62, I-00146 Rome, Italy
Frigerio, Jacopo
Isella, Giovanni
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Politecn Milan, Dipartimento Fis, LNESS, Via Anzani 42, I-22100 Como, ItalyRoma Tre Univ, Dept Ind Elect & Mech Engn, Via Vito Volterra 62, I-00146 Rome, Italy
机构:
Xiamen King Long United Automot Ind Co Ltd, Xiamen 361023, Peoples R ChinaXiamen King Long United Automot Ind Co Ltd, Xiamen 361023, Peoples R China
Jiang, Jin
Wei, Yiqun
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Peking Univ, Shenzhen Inst, Shenzhen 518057, Peoples R ChinaXiamen King Long United Automot Ind Co Ltd, Xiamen 361023, Peoples R China
Wei, Yiqun
Yue, Yutao
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Peking Univ, Shenzhen Inst, Shenzhen 518057, Peoples R ChinaXiamen King Long United Automot Ind Co Ltd, Xiamen 361023, Peoples R China
Yue, Yutao
Chen, Hongmin
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Sanming Univ, Sch Informat Engn, Sanming 365004, Peoples R ChinaXiamen King Long United Automot Ind Co Ltd, Xiamen 361023, Peoples R China
Chen, Hongmin
Yang, Fenghe
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Zhang Jiang Lab, Shanghai 201210, Peoples R ChinaXiamen King Long United Automot Ind Co Ltd, Xiamen 361023, Peoples R China
Yang, Fenghe
Cui, Jishi
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Sanming Univ, Sch Informat Engn, Sanming 365004, Peoples R ChinaXiamen King Long United Automot Ind Co Ltd, Xiamen 361023, Peoples R China