Growth of Ru-doped β-FeSi2 polycrystalline thin films by RF magnetron sputtering

被引：0
|
作者：
Terai, Yoshikazu [1 ]
Yoshihara, Ren [1 ]
Oishi, Yuya [1 ]
机构：
[1] Kyushu Inst Technol, Dept Phys & Informat Technol, Iizuka, Fukuoka 8208502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / SD期
关键词：
ternary silicide; iron silicide; photoluminescence; MU-M LUMINESCENCE; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURES; BINARY PHASE; SILICIDES; ORIGIN; PHOTOLUMINESCENCE; IMPLANTATION; SPECTRA; SILICON;
D O I：
10.35848/1347-4065/aca59b
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ternary silicide beta-(Fe1-x Ru (x) )Si-2 polycrystalline thin films were fabricated by RF magnetron sputtering. The crystal structure of beta-(Fe1-x Ru (x) )Si-2 was the same orthorhombic (space group: Cmca) as beta-FeSi2 in the Ru composition of 0 <= x <= 0.63. The lattice constants increased with increasing Ru composition, and Vegard's law was obtained. The wavenumber of the Raman line of Fe-Fe and Fe-Si vibrations shifted to a lower wavenumber with increasing Ru composition. The 1.5 mu m photoluminescence (PL) was observed in Si/beta-(Fe1-x Ru (x) )Si-2/Si double heterostructure (DH) with x = 0.57. The PL lifetime of the Ru-doped DH sample was shorter than that of the beta-FeSi2 (x = 0) DH sample.
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页数：4
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